Effective modulation of ZnO band gap and the modulation mechanism study (ZnO band gap study)

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75.316 EUR

With a wide band gap of 3.37eV and a large exciton banding energy of 60meV at room temperature, ZnO has been considered as a promising material for optoelectronic devices, such as short-wavelenghth light-emitting diodes and laser diodes. To realize ZnO-based devices, band-gap engineering is necessary to control or alter the band gap of ZnO. Band gap engineering is the process of controlling or altering the band gap of materials by controlling the composition of semiconductor alloys. For ZnO materials, the band gap engineering can be  achieved by alloying MgO, BeO or CdO. In our proposal,  we will realize the modulation of ZnO band gap by band gap engineering, understand the modulation mechanism and possess the key technology to fabricate ZnO-based devices. We would like to realize the effective doping of Mg and Cd in ZnO films and nanowires by magnetron sputtering and chemical vapor deposition, optimizing the growth parameter of AxZn1-xO materials (A=Mg, Be or Cd), which will result in the effective modulation of ZnO band gap. Besides, we will study and understand the modulation mechanism of ZnO band gap to established scientific basis and technical support for designs of ZnO-based devices.

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