Uroš Desnica

Uroš Desnica

dr. sc., mr. sc., dipl. ing

znanstveni savjetnik
+385 1 456 1173

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0915351182

Krilo 2/227

Dr. sc. Uroš Desnica
Laboratorij za poluvodiče
Zavod za fizikiu materijala
Soba II/227
Institut R. Bošković
Bijenička 54
10000 Zagreb, Hrvatska

Bibliografija

eCVf_HR_UD+Prilozi 2011.doc 260,00 kB

Obrazovanje

Datum 10. 07. 1978 g.
Mjesto Zagreb
Ustanova Institut Ruđer Bošković
Zvanje Dr.sc.
Datum 26. 11 1971 g.
Mjesto Zagreb
Ustanova Sveučilište u Zagrebu
Zvanje Mr.sc.
   
Datum 10. 07.  1968 g.
Mjesto Zagreb
Ustanova Prirodoslovno-Matematički Fakultet u Zagrebu
Zvanje Dipl. ing. fizike

Područja znanosti

fizika kondenzirane tvari

Specifični znanstveni interesi

solarna energija, fotonaponske ćelije i moduli, obnovljivi razvoj, obnovljivi izvori energije, solarna arhitektura, racionalno korištenje energije

Projekti

Trenutno vanjski suradnik na dva projekta Laboratorija za poluvodiče

U razdoblju 2005-07 Voditelj (te u ranijoj fazi predlagač) IRB dijela projekta kao partnera u  FP6 Projektu RISE
(Tkođer WP4 leader u istom projektu, te koordinator za hrvatske partnere);

Predlagač, a po prihvaćanju i glavni istraživač više projekata istraživanja na Sinhrotronu Elettra (Basovizza, Italija), (Proposal 2005129-Germanium Quantum Dots in Multilayers produced by magnetron sputtering , 2004413 -Ion-Beam Synthesized Germanium and Diamond Quantum dots); 2003724-Compound Semiconductor Quantum dots Formed by Ion Implantation of Constituent Atoms, 2002172 -Study of Semiconductors Quantum Dots Formed by Ion Implantation, 2000126 - Nanocrystals Formed in SiO2 Substrate by Ion Implantation).

Voditelj zadataka trajne istraživačke djelatnosti 1981-84 g., 1988-90 g. te 1991-96 g ("Istraživanje defekata u poluvodičima"); Voditelj tzv. "selektivnih" istraživanja, Alpe-Jadran projekta 1990; te više ugovora s privredom. Zamjenik voditelja HITRA projekta Hrvatska solarna kuća, I faza. Inicijator i učesnik u više međunarodnih suradnji.

Nagrade i priznanja

-Republička nagrada "R.Bošković" 1972.g za istaknuti znanstveni      rad na području prirodnih znanosti.

Njemačka DAAD stipendija 1998 g.

Američka IREX stipendija za 1984/85.

Učestvovao s prilogom (od čega 6 pozvanih predavanja), na većem brojem konferencija/simpozija (preko 20 inozemnih).
Posljednja pozvana predavanja bila su u 2010 g:

U. Desnica: “Electricity from the Sun: A Bright Future Shines on PV”, at ECSAC 10 - "Sustainable Energy: Challenges and Opportunities", August, 23-27, 2010
U. Desnica: " Electricity from the Sun: The Presence and Future of Photovoltaics - a Review
 October, 19-23, 2010, at '22nd Conference „Energy and Environment '.

Nastava

Trenutno ne učestvujem u nastavi

Ranije, na dodiplomskom studiju: Fizički praktikum III i IV na PMF
 Na postdiplomskom studiju: Kolegij Fizikalne osnove termičke i fotonaponske konverzije sunčeve energije

Istaknute publikacije

        SELECTION OF SCIENTIFIC PAPERS IN INTERNATIONAL JOURNALS CITED IN "CURRENT CONTENTS"

Svi CC radovi su dani u

 104. Generation of an ordered Ge QD array in an amorphous silica matrix by ion bem irradiation – modeling and structural characterization,
M. Buljan, I. Bigdanovic-Radovic, M. Karlusic, U.V. Desnica, N. Radić, N. Skukan, G. Dražić, K. M. Ivanda, O. Gamulin, Z. Matej, V. Valeš, J. Grenzer, T.W. Cornelius, H.T. Metzger and V. Holy, Phys. Rev. B 81 (2010), 085321 (2010) [8 pages],   DOI: 10.1103/PhysRevB.81.085321

103.  Formation of three-dimensional quantum-dot superlattices in amorphous systems:
 Experiments and Monte Carlo simulations
 M. Buljan, I. Bogdanović-Radović, M. Karlušić, U. V. Desnica, G. Dražić, N. Radić, P. Dubček, K. Salamon, S. Bernstorff, and V. Holý

       Applied Phys.Letters 95, 063104  (2009)

       (Also the same paper is included in the selection of :
 Virtual Journal of Nanoscale Science & Technology, Volume 20, Issue 8, 2009)

101. Formation of three-dimensional quantum-dot superlattices in amorphous systems:
 Experiments and Monte Carlo simulations
 M. Buljan, U.V. Desnica,  M. Ivanda, N. Radić, P. Dubček, G. Dražić, K. Salamon, S. Bernstorff, V. Holy
 Phys. Rev. B 79 (2009)  035310
 (Also the same paper is included in the selection of :
 Virtual Journal of Nanoscale Science & Technology, Volume 19, Issue 4, 2009))

100. The influence of deposition parameters on the correlation of Ge quantum dot positions in amorphous silica matrix
 M. Buljan, U. V. Desnica, G. Dražić, M. Ivanda, N. Radić, P. Dubček, K. Salamon, S. Bernstorff and V. Holy
 Nanotechnology 20 (2009) 085612
(Selected for Journal Highlights articles (in LabTalk March 10, 2009 - http://nanotechweb.org/cws/article/lab/38162)

 98. D. Ristić,1 M. Ivanda, K. Furić, U. V. Desnica, M. Buljan, M. Montagna, M. Ferrari,
 A. Chiasera, and Y. Jestin
 Journal of Applied Physics, 104, 073519-1 - 073519-7 (2008)

97. M. Buljan, I. Bogdanović Radović, U. V. Desnica, M. Ivanda, M. Jakšić,C. Saguy, R, Kalish, I. Djerdj, A. Tonejc, O. Gamulin
 Implantation conditions for diamond nanocrystals formation in amorphous silica matrix
 Journal of Applied Physics, 104, Issue 3, 034315-1 - 8 (2008)

Superlattices and Microstructures, 44 (2008) 385-394,       doi:10.1016/j.spmi.2008.01.021

95. U.V. Desnica, K. Salamon, M. Buljan, P. Dubcek, N. Radic, I.D. Desnica-Frankovic, Z. Siketic, I. Bogdanovic-Radovic, M. Ivanda, S. Bernstorff
 Formation of Ge-nanocrystals in SiO2 matrix by magnetron sputtering and post-deposition thermal treatment
 Superlattices and Microstructures, 44 (2008) 323-330,        doi:10.1016/j.spmi.2008.01.013

94. Mario Rakic, D. Desnica-Frankovic and Uros V. Desnica
 Potential for Off-grid PV aplication on  Croatian islands
 Strojarstvo, 49(3):217-224, 2007 May-Jun. (printed in 2008 g.)          ISSN:0562-1887

93. I.D. Desnica-Franković, P. Dubcek, U.V. Desnica, S. Bernstorff M.C. Ridgway, and C.J. Glover,  GISAXS studies of structural modifications in ion-beam amorphized Ge,
 Nucl. Instr. Methods Phys. Res. B,  249, 114-117 (2006)           ISSN: 0168-583X

92 . U.V. Desnica, M. Buljan, P. Dubcek, Z. Sikatic, I. Bogdanovic Radovic, S. Bernstorff, U. Serincan, R. Turan
 Ion beam Synthesis and characterization of Ge nanocrystals in SiO2
 Nucl. Instr. Methods Phys. Res. B, 249, 843-846 (2006)

90. I.D. Desnica-Frankovic, P. Dubcek, M. Buljan, K. Furic, U.V. Desnica S. Bernstorff, H. Karl, I. Großhans and B. Stritzker
 Influence of stoichiometry deviations on properties of ion-beam synthesized CdSe QDs
 Nucl. Instr. Methods Phys. Res. B, 238, 302-305  (2005)

89. I.D. Desnica-Frankovic, U.V. Desnica, K. Furic, J. Wagner, T.E. Haynes
 Hall effect and Raman analysis of residual damage and free electron concentration in Si- implanted GaAs: a quest for better doping efficiency, Journal of Physics and Chemistry of Solids,  66, 1158-1163 (2005)

88. U.V. Desnica, P. Dubcek, K. Salamon, I.D. Desnica-Frankovic, M. Buljan, S. Bernstorff, U. Serincan, R. Turan
 The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2
 Nucl. Instr. Methods Phys. Res. B, 238, 272-275  (2005)

87. U. V. Desnica, M. Buljan, I.D. Desnica-Frankovic, P. Dubcek, S. Bernstorff, M. Ivanda, H. Zorc, Direct Ion Beam Synthesis of II-VI Nanocrystals,
 Nucl. Instr. Methods Phys. Res. B, 216, 407-413 (2004).

86. M. Pavlović, B. Šantić , D. I. Desnica-Franković, N. Radić, T. Šmuc and  U. V. Desnica

The Impact of Deep Levels on Photocurrent Transients in Semi-Insulating GaAs
 J. Electronic Materials, 32, 1100-1106 (2003)

85. M. Pavlović, U. V. Desnica, Z.-Q. Fang  and  D. C. Look,

Thermoelectric Spectroscopy Merasurements on Semi-Insulating GaN
 Vacuum, 71, 153 - 158

84. U. V. Desnica, P. Dubcek, I.D. Desnica-Frankovic, M. Buljan, S. Bernstorff and S.W. White
 GISAXS studies of the synthesis and growth of CdS quantum dots from constituent atoms in SiO2 matrix ,
 J. Appl. Cryst., 36, 443-446 (2003)

83. M. Buljan, K. Salamon, P. Dubcek, S. Bernstorff, I.D. Desnica-Frankovic, O. Milat and U. V. Desnica, Analysis of 2D GISAXS patterns obtained on semiconductor nanocrystals, Vacuum, 71, 65-70 (2003)

82. I.D. Desnica-Frankovic, U. V. Desnica, P. Dubcek, M. Buljan, S. Bernstorff, H. Karl, I. Großhans, and B. Stritzker 
 Ion beam synthesis of buried Zn-VI quantum dots in SiO2 – a GISAXS studies
 J. Appl. Cryst., 36, 439-442 (2003).

80. U V. Desnica, P. Dubcek, I.D. Desnica-Frankovic, M. Buljan, K. Salamon, O. Milat, S. Bernstorff, and C.W. White
 GISAXS Sstudies of morphology and size distribution of CdS nanocrystals formed in SIO2 by ion implantation
 Nucl. Instr. Methods Phys. Res. B, 200, 191-195 (2003)

78. U.V. Desnica , I.D. Desnica-Frankovic, O. Gamulin, C.W. White, E. Sonder and R.A. Zuhr
 Formation of CdS nanocrystals in SiO2 by ion implantation
 J. Non-Crystalline Silids, 299-302,  1100-1104 (2002).

76. P. Dubcek, S. Bernstorff, U.V. Desnica, I.D. Desnica-Frankovic , K. Salamon
 GISAXS study of Cadmium Sulfide quantum dots obtained by ion implantation.
 Surface Review and Letters 9, 455-459 (2002)               ISSN: 0218-625X

75. U. V. Desnica, M. Pavlović, Z.-Q. Fang  and  D. C. Look,
 Thermoelectric Effect Spectroscopy of Deep Levels in Semi-Insulating GaN
 J. Appl. Phys, 92, 4126-4128, 2002

72. U.V. Desnica,  O. Gamulin, A. Tonejc, M. Ivanda, C.W. White, E. Sonder,  R.A. Zuhr CdS nanocrystals formed in SiO2 substrate by ion implantation,
 Materials Science & Engineering C  15, 105-107 (2001)

71. M. Pavlović, U.V. Desnica and J. Gladić
 The unique set of deep traps signatures in semi-insulating GaAs
 J. Appl. Phys. 88, 4563-4570  ( 2000)

70. U.V. Desnica, I.D. Desnica-Frankovic, R. Magerle and M. Deicher
 Experimental evidence of self-compensation Mechanism in CdS
 J. Cryst. Growth 197, 612-615 (1999)

68. U.V. Desnica, I.D. Desnica-Frankovic, R. Magerle and M. Deicher
 Compensating defects and electrical activation of donors in CdS
 Physica B, 273-274, 907-910 (1999)

67. Z-Q. Fang, D.C. Look, M. Pavlovic and U.V. Desnica
 Role of contacts in characterization of deep traps in semi-insluating GaAs by thermally stimulated current spectroscopy
 J. Electronic Materials, 28, L27-L30 (1999)

66. Uroš V. Desnica, Wide-bandgap II-VI compounds - can the efficient doping be acheaved?
 (invited talk presented at JVC-7, Debrecen, May 26-29, 1997) Vacuum, 3-4, 463-471 (1998)

65. O. Gamulin, M. Ivanda, U. Desnica i K. Furic,
 Structural relaxation of amorphous silicon during thermal and laser annealing,
 J. Noncryst. Solids, 227-230, 943-948 (1998)

64. M. Pavlovic, U. Desnica
 Precise Determination of Deep Traps Signatures and their Relative and Apsolute Concentrations in SI GaAs
 J. Appl. Phys. 84, 2018 (1998)

63. M. Pavlovic, U. Desnica
 Improvement in Semi-insulating GaAs material quality: a Comparative Study of Defects with Deep Levels,
 Jpn. J. Appl. Phys. 37, Pt. 1, No.9A , 4687-4694 (1998)

62. U.V. Desnica,
 Doping of II-VI compounds – challenges, problems and solutions (Review)
 Progress Cryst. Growth&Character. Materials, 36, No.4 291-357 (1998) ISSN: 0960-8974

61. Pavlovic M., Desnica U. V., Radic N., and Šantic B., 
 Defects with deep levels and their impact on optical absorption  of semi-insulating GaAs,
 Strojarstvo, 38, 287-290 (1997)

60. U.V. Desnica, I.D. Desnica-Frankovic, M. Ivanda, K. Furic and T.E. Haynes:
 Morphology of implantation induced disorder in GaAs studied by Raman spectroscopy and ion channeling, Phys. Rev. B 55, 16205-16216 (1997)

55. U.V. Desnica, I.D. Desnica, M. Ivanda and T.E. Haynes:
 Morphology of implantation induced disorder in GaAs
 Nucl. Instr. & Meth.,  120, 236-239 (1996)

53. M. Pavlović, B. Šantić and U.V. Desnica,
 TSC Comparative Study of Deep Levels in various SI GaAs crystals
 J. of Physics D: Applied Physics 28, 934-938 (1995)

51. N.Radić, B. Šantić and U. V. Desnica,
 EL2 Metastability Related Transients Revisited
 Jpn. J. Appl. Phys. 34, 5922-5925 (1995)                                   ISSN: 0021-4922

50. Desnica U.V., Šantić B., Desnica Dunja I. and Pavlović M.
 Trapping and Recombination Processes via Deep Level T3 in Semi-Insulating Gallium Arsenide
 Journal of Electronic Materials, 22, 403-407, (1993)               ISSN: 0361-5235

49. Šantić B., Desnica U.V., Radić N., Desnica Dunja I. and Pavlović M.
 Photoconductivity Transients and Photo-sensitization Phenomena in Semi-Insulating GaAs
 J. Appl. Phys. 73, 5181-5184 (1993)

46. U.V. Desnica, J. Wagner, T.E. Haynes and O.W. Holland:
 Raman and Ion Channeling Analysis of Damage in Ion-implanted GaAs: Dependence on ion dose and dose rate
 J. Appl. Phys. 71, 2591 (1992)

45. T. Bencihiguer, B. Mari, C. Schwab and U.V. Desnica:
 Donor-Acceptor Pair as Opposed to Anion Antisite Metastability in Bulk Semi-insulating GaAs: Electron Paramagnetic Resonance and Photoconductivity Data Analysis 
 Jpn. J. Appl. Phys. 31, 2669-2672 (1992)                                   ISSN: 0021-8979

40. U.V. Desnica, Dunja I. Desnica and B. Šantić:
 EL2-Related Deep Traps in Semi-Insulating GaAs
 Appl. Phys. Lett., 58, 278 (1991)

37. B. Šantić, N. Radić and U.V. Desnica:
 Calculation of the Glow Curve Shape - Application to the Thermally Stimulated Currents (TSC)
 Solid State Commun. 79, 535 (1991)

36. U.V. Desnica, Dunja I. Desnica and B. Šantić:
 The Analysis of low-temperature Photoconductivity Evolution in Semi-Insulating GaAs
 J. Phys.: Condens. Matter 3, 5817-24 (1991)

Appl. Surf. Sci. 50, 269 (1991)

34. U.V. Desnica and B. Šantić:
 Trap Induced Photoconductivity in Semi-Insulating Gallium Arsenide
 J. Appl. Phys. 67, 1408 (1990)

32. B. Šantić, Dunja I. Desnica, B.G. Petrović and U.V. Desnica:
 Quenching and Enhancement of Photoconductivity in Semi-Insulating GaAs
 Solid State Commun. 74, 847 (1990)

31. U.V. Desnica, Dunja I. Desnica and B. Šantić:
 Light Intensity Dependenco of Slow-Relaxation Phenomena in Semi-Insulating GaAs
 Appl. Physics A, 51, 1525 (1990)

30. B. Šantić and U.V. Desnica:
 Thermoelectric Effect Spectroscopy of Deep Levels - Application to Semi-Insulating GaAs
 Appl. Phys. Lett., 56, 2636 (1990)

29. U.V. Desnica:
 Factors Influencing Site Selection of Dopants in Binary Semiconductors,
 Solid State Commun. 69, 411 (1989)

28. U.V. Desnica and B. Šantić:
 Optically Enchanced Photoconductivity in Semi-Insulating Gallium Arsenide,
 Appl.Phys.Lett. 54, 810 (1989)

27. B. Pivac and U.V. Desnica:
 Influence of High Temperature Thermal Treatment on Edge-Defined Film-Fed Growth Silicon
 J.Appl.Phys. 65, 4759-62 (1989)

26. U.V. Desnica:
 Persistent Photocurrents in Semi-Insulating Gallium Arsenide,
 Rad. Eff. and Defects in Solids, 111+112, 83 (1989)

25. B.ŠŠantic, U.V. Desnica and N. Radić:
 A Simple Method for determination of the Hall constant
 J.Phys.E: Sci.Instr., 22, 997 (1989)

24. I.D. Desnica and U.V. Desnica:
 Tellurium Related Deep Traps in Silicon, in "Semiconductor Silicon", Springer Series in Material Science, Vol. 13; Ed.:G.C.Harbeke and M.J. Schulz, Springer-Verlag Berlin Heidelberg; p. 153, (1989)

23. U.V. Desnica, M. Skowronski and M.C. Cretella:
 Comments on  "Pair of Local Vibrational Mode Absorption Bands  Related to EL2 Defects in SI-GaAs",
 Appl.Phys.Lett. 52, 760 (1988)

22. B. Pivac and U.V. Desnica:
 Oxygen and Carbon Related Defects in Edge-Defined Film-Fed Growth Silicon Ribbon
 J. Appl. Phys. 64, 2208  (1988)

21. U.V. Desnica and B.G. Petrović:
 Reply to Comments by S.A.Klein,
 Solar Energy 39, 157 (1987)

20. U.V. Desnica, M. Cretella, L. Pawlowicz and J. Lagowski:
 Distribution Coefficient of Carbon in Melt-Grown GaAs,
 J.Appl.Phys. 62, 3639 (1987)

19. U.V. Desnica and L.Pawlowicz:
 Distribution Coefficient of Carbon in GaAs, in "Gallium Arsenide and Related Compounds", IPCS Vol. 83, Ed. by W.T. Lindley, Institute of Physics, Bristol, p. 33 (1987)   

18. U.V. Desnica, B.G. Petrović and D. Desnica:
 Calculation of Monthly Average Daily Insolation on Tilted, Variously Orientated Surfaces Using Analitically Weighted Rb factors;
 Solar Energy 37, 81-90 (1986)

17. U.V. Desnica, N. Ravi, H. Andreasen and H. de Waard:
 "Antisite" Incorporation of Sb Dopant in GaN
 Solid State Commun. 60, 59 (1986)

14. J.W. Corbett, J. Corelli, U.V. Desnica and L.C. Snyder;
 Defects Aggregates in Silicon, in "Microscopic Identification of Electronic Defects in Semiconductors" Eds.: N.M. Johnson, S. Bishop and G.D. Watkins; MRS, Pittsburgh, p. 243-255 (1985)

13. U.V. Desnica, D. Desnica and N.B. Urli:
 Applicability of Liu-Jordan Correlation in Yugoslavia,
 Solar Energy 31, 435 (1984)                                                       ISSN: 0038-092X

 12. D. Gracin and U.V. Desnica:
 Window with Heat Mirror for Energy Conservation,
 Energy Research 8, 53 (1984) 

11. U.V. Desnica N.B. Urli and B. Pivac:
 Climatic Predispositions of Yugoslavia for Solar Energy Application
 Solar Energy 30, 401 (1983)                                                       ISSN: 0038-092X

8. U.V. Desnica:
 Indirect Doping as a Possibility for Obtaining p-Type Conductivity in CdS,
 Phys. St. Solidi (a) 39, K33 (1977)

  7. U.V. Desnica and N.B. Urli:
 An Approach to the Problem of the Displacement Energy Threshold in Semiconductors,
 Phys. St. Solidi (b) 83, K41, (1977)

  6. U.V. Desnica, N. Urli and B. Etlinger:
 Method of Growing p-Type GaN in Nonequilibrium Conditions,
 Phys.Rev. B15, 4119 (1977)

1. U.V. Desnica and N.B. Urli:
 Self-Compensation and Interaction  of Li with Thermal- and  Radiation-Induced Defects in CdTe,
 Phys. Rev. B6, 3044 (1972)

Članstva u profesionalnim udrugama / društvima

ISES (International Solar Energy Society, London)

HUSE (Hrvatsko udruženje za solarnu energiju)

Hrvatsko fizikalno društvo

Hrvatsko vakuumsko društvo

Ostalo

Posebne odgovornosti,voditeljstva, evaluiranje,…

Trenutno: Vice Chairmen oft he EUROSUN 2012 Conference

Član Matičnog odbora za područje Fizike (2006-2009).
Tijekom 2001-2004 g. u više sam navrata (kao zamjenik, u ukupnom trajanju cca  1 god.) vršio dužnosti: Pročelnika odjela Fizika Materijala, Voditelja Laboratorija za poluvodiče, Voditelja zadatka «Utjecaj defekata i nanostruktura na svojstva poluvodiča».
Predlagač, a po prihvaćanju i glavni istraživač više projekata istraživanja na Sinhrotronu Elettra (Basovizza, Italija), (Proposal 2005129-Germanium Quantum Dots in Multilayers produced by magnetron sputtering , 2004413 -Ion-Beam Synthesized Germanium and Diamond Quantum dots); 2003724-Compound Semiconductor Quantum dots Formed by Ion Implantation of Constituent Atoms, 2002172 -Study of Semiconductors Quantum Dots Formed by Ion Implantation, 2000126 - Nanocrystals Formed in SiO2 Substrate by Ion Implantation).
God. 2001-2003 predsjednik Znanstvenog vijeća Odjela fizike IRB, član Znanstvenog i “Malog vijeća” IRB,  predsjednik Izbornog odbora fizike, predsjednik Povjerenstva za izbor krupne opreme za Prioritetnu listu IRB (2002 – 2004 g.), član Povjerenstvstva za ocjenu i izbor mladih znanstvenika, itd.
 Voditelj Laboratorija za poluvodiče 1987-88,  od 1989 do 1992, te od 1995-97.
 Voditelj više doktorskih (4), magistarskih i diplomskih radova.
Urednik časopisa "Sunčeva energija" od 1981-86. Član organizacionog komiteta više znanstvenih i stručnih konferencija (područja Fizika čvrstog stanja te Sunčeva energija). Recenzent za niz časopisa te radova na brojnim konferencijama

Recenziranje-evaluiranje:
U 2006 -2011 godini učestvovao, kao EC ekspert –evaluator,  u  dvije prilike u 2-tjednim ocjenjivanjimai i rangiranjima većeg broja Proposala u FP6 odnosno FP7 okviru, Recenzirao „remote“ veći broj  projekata (Final Review), odnosno služio kao evaluator mid-term progresa EC projekata. Posljednja dva u 2011 g.
Od 09-. 2010 također na Listi expert-evaluators za Austrian Climate and Energy Fund i za Austrian Research Promotion Agency., a također i na Listi eksperata HRZZ.

U prethodnim godinama obavio sam, u svojstvu recenzenta, niz različitih zadataka za MZOŠ – član povjerenstva za ocjenu Projekata Fizike u 2 višegodišnja mandata, ocjena jednog post-diplomskog studija, evaluator više zadataka izvan prirodnih znanosti (u tehničkim znanostima); član za odabir projekata u jednoj međunarodnoj suradnji, itd.