Supported by:
Project title: Silicon nanocrystals solar cells ... Properties and characterisation
01.10.2009 - 30.09.2011

The main objective of this project is to investigate properties of the advanced solar cell materials for such solar cells, so called "nano solar cells". In this project we have available three growth techniques which will be used for sample preparation. Although silicon nanocrystals have been studied extensively in the past few years, this research is mainly focus on the structural properties of the silicon nanocrystals embedded in an oxide matrix. The samples will be characterized with electrical and optical methods. Capacitance technique such as Laplace Deep Level Transient Spectroscopy (Laplace DLTS) will be used for the very first time for studying the electrical properties of the silicon nanocrystals in the oxide matrix. The information that could be obtained with this technique, regarding the electrical behavior of the silicon nanocrystals such as free carrier concentration, deep trap states, activation energies etc., are of the crucial importance for the application of silicon nanocrystals in future generations of solar cells. With this we can assist the development of the Croatia's solar industry. This project will also provide the opportunity for transfer of knowledge to undergraduate students working on their diploma thesis.


Project leader: Ivana Capan {capan at irb.hr}
Researher: Robert Slunjski {robert.slunjski at irb.hr}

Leading Organization:
Rudjer Boskovic Institute, Zagreb, Croatia

Partner Organizations:
The University of Manchester, Manchester, UK
Cemat Silicon S.A, Warsaw, Poland

Media:

Publications:

Visits1/Conferences2:


Timetable:
TimeDescription
01.10 - 15.11.Test-samples preparation
15.11 - 01.12. C-V measurements
01.12 - 31.12.2009 DLTS measurements on MOS structures
01.01 - 12.01.2010. Analysis, paper preparation
12.01 - 15.02 Sample preparation, CV measurements
16.02 - 01.03.2010. Paper preparation
02.03 -21.04.2010 New samples
22.04 -02.05.2010 Visit to Manchester; Electrical and optical measurements
03.05 -16.05.2010 Analysis
17.05 -04.06.2010 New samples preparation
06.06 -11.06.2010 E-MRS Spring Meeting in Strasbourg
14.06 - 01.07.2010 C-V measurements and analysis (Ge QD)
09.07 - 23.07.2010 DLTS measurements and analysis (Ge QD)
23.07 - 01.10.2010 Paper preparation
01.10 - 26.11.2010 C-V and DLTS measurements on Ge QDs
27.11 - 04.12.2010 MRS Fall Meeting in Boston
06.12 - 01.03.2011. C-V and DLTS measurements of freestanding Si nanocrystals (collaboration with University of Aveiro)
07.03 - C-V measurements- SiGe, CdSe and Ge ncs (collaboration with University of Minho)
08.05 - 13.05.2011 E-MRS Spring Meeting in Nice
16.05 - 10.06.2011 Paper preparation
13.06 - 25.06.2011 Visit to Manchester
27.06 - 03.07.2011 Talk preparation
04.07 - 10.07.2011 Visit to Braga