Publications:

 

  1.  V. Borjanović, I.Kovačević, B.Šantić, and B. Pivac: Deep Levels in Oxygen doped EFG Poly-Si; Materials Science & Engineering, B 71 (2000) 292-296.
  2. B. Pivac, I. Kovačević, and V. Borjanović: Defects in carbon and oxygen implanted p-type silicon, Nuclear Instrum. And Methods in Phys. Res. B 186 (2001) 355-359.
  3. B. Pivac, I. Kovačević, and V. Borjanović: Point Defects in Carbon-Rich Polycrystalline Silicon, Solid State Phenomena 80-81 (2001) 115-120.
  4. B. Pivac, V. Borjanović,  I. Kovačević, B. N. Evtody, and E. Katz: Comparative studies of EFG ribbon poly-Si grown by different procedures, Sol. Cells & Sol. En. Mater. 72 (2002) 183-189.
  5. V. Borjanović, I. Kovačević, H. Zorc, and B. Pivac: Irradiation effects on polycristalline silicon, Sol. Cells & Sol. En. Mater  72 (2002) 487-494.
  6. B. Pivac, I. Kovačević, and I. Zulim: Defects Induced in Amorphous Silicon Thin Films by Light Soaking, Thin Solid Films 403-403 (2002) 513-516.
  7. I.Kovačević, V. Borjanovic, B.Pivac: Interstitial defects in ion-implanted Si, Vacuum 71 (2003) 129.
  8. B.Pivac, M.Pavlovic, I.Kovačević, B.Etlinger, I.Zulim: Light induced defects in amorphous silicon thin film, Vacuum 71 (2003) 135.
  9. I Kovačević, V P Markevich, I D Hawkins, B Pivac and A R Peaker: Vacancy related complexes in neutron irradiated silicon, J. Phys.: Condens. Matter 17  (2005) S2229.
  10. I. Kovačević and B.Pivac: Defect production in g-irradiated silicon at different temperatures, Vacuum 80 (2005) 223.
  11. I. Kovačević, P. Dubček, H. Zorc, N. Radić, B. Pivac, and S. Bernstorff: GISAXS characterization of Ge islands on Si(100) substrates, Vacuum 80 (2005) 69.
  12. I. Kovačević, B.Pivac, P. Dubček, N. Radić, S. Bernstorff and A.Slaoui: A GISAXS study of SiO/SiO2 superlattice, Thin Solid Films 511-512 (2006) 463.
  13. B.Pivac, I. Kovačević,  P. Dubček, N. Radić, S. Bernstorff and A.Slaoui: Self-organized growth of Ge islands on Si(100) substrates, Thin Solid Films 511-512 (2006) 153.
  14. B. Pivac, P. Dubcek, I. Kovačević, S. Bernstorff, R. Mu, M. Wu, A. Ueda and B. Vlahovic: GISAXS study of gold implanted fused silica, Scripta Materialia 55 (2006) 135.
  15. B.Pivac, I. Kovačević,  P. Dubček, N. Radić, S. Bernstorff: GISAXS study of Si nanocrystals formation in SiO2 thin films,Thin Solid Films 515 (2006) 756.
  16. N. Radić, B.Pivac, P. Dubček, I. Kovačević, S. Bernstorff: Growth of Ge islands on Si substrates, Thin Solid Films 515 (2006) 752.
  17. A. R. Peaker, V. Markevich, J. Slotte, M. Rummukainen, I. Capan, B. Pivac, R. Gwilliam, C. Jeynes, L. Dobaczewski: Understanding Ion Implantation Defects in Germanium, ECS Trans. 3 (2006) 67.
  18. S. Bernstorff, P. Dubcek, B. Pivac, I. Kovačević, A. Sassella, A. Borghesi: GIXR and GISAXS study of silicon oxinitride films, Applied Surface Science 253 (2006) 33.
  19. I. Kovačević, B. Pivac, R. Jačimović, M.K. Khan, V.P. Markevich, and A.R. Peaker, Defects induced by irradiation with fast neutrons in n-type germanium,  Materials Science in Semiconductor Processing 9 (2006) 606.
  20. I. Kovačević, B. Pivac, P. Dubček, H. Zorc, N. Radić, S. Bernstorff, M. Campione, and A. Sassella, Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing, Applied Surface Science 253 (2007) 3034.
  21. S. Bernstorff, P. Dubček, I. Kovačević, N. Radić, B. Pivac: Si nanostructures in SiO2 films, Thin Solid Films 515 (2007) 5637
  22. A. Misiuk, B. Surma, J. Bak-Misiuk, C.A. Londos, P. Vagovič, I. Kovacevic, B. Pivac, W. Jung and M. Prujszczyk: Revealing the radiation – induced effects in silicon by processing at enhanced temperatures – pressures, Radiation Measurements 42 (2007) 688.
  23. I. Kovacević, P. Dubcek, S. Duguay, H. Zorc, N. Radić, B. Pivac, A. Slaoui and S. Bernstorff: Silicon nanoparticles formation in annealed SiO/SiO2 multilayers, Physica E 38 (2007) 50.
  24. I. Capan, V. Borjanović, and B. Pivac:  Dislocation-related deep levels in carbon rich p-type polycrystalline silicon, Solar Energy Materials and Solar Cells 91 (2007) 931.
  25. V.P. Markevich, A.R. Peaker, I. Capan, S.B. Lastovskii, L. Dobaczewski, V.V. Emtsev and N.V. Abrosimov: Electrically active defects induced by irradiations with electrons, neutrons and ions in Ge-rich SiGe alloys, Physica B: Condensed Matter 401-402 (2007) 184.
  26. P. Dubcek, B. Pivac, I. Capan, S. Bernstorff, R. Mu, B. Vlahovic: Evolution of nanoparticles in gold-implanted glass, Vacuum 82 (2008) 130
  27. B. Pivac, P. Dubcek, I. Capan, N.Radic, S. Bernstorff: GISAXS study of Si nanoclusters in SiO/SiO2 layers, Vacuum 82 (2008) 189.
  28. A.R. Peaker, V. P. Markevich, J. Slotte, K. Kuitunen, F. Tuomisto, A. Satta, E. Simoen, I. Capan, B. Pivac and  R. Jačimović:  Vacancy Clusters in Germanium, Solid State Phenomena 131-133 (2008) 125
  29. B. Pivac, P. Dubček, I. Capan, H. Zorc, S. Bernstorff, S. Duguay, A.Slaoui: Structural analysis of annealed amorphous SiO/SiO2 superlattice, Thin Solid Films 516 (2008) 6796.
  30. K. Wieteska, A. Misiuk, M. Prujszczyk, W. Wierzchowski, B. Surma, J. Bąk-Misiuk, P. Romanowski, A. Shalimov, I. Capan, D. Yang and W. Graeff:  Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment, Acta Physica Polonica A 114 (2008) 439.
  31. K. Kuitunen, F. Tuomisto, J. Slotte,  I. Capan:  Divacancy clustering in neutron-irradiated and annealed n -type germanium , Physical Review B 78 (2008) 033202.
  32. B. Pivac, P. Dubcek, I. Capan, I. Zulim, T. Betti, H. Zorc, S. Bernstorff: Nano Si Superlattices for the Next Generation Solar Cells, Journal of Nanoscience and Nanotechnology 9 (2009) 3853.
  33. I. Capan, B. Pivac, I.D. Hawkins, V.P. Markevich, A.R. Peaker, L. Dobaczewski and R. Jačimović: Neutron-irradiation-induced defects in germanium: A Laplace deep level transient spectroscopy study, Vacuum  84 (2010) 32.
  34. J. Slotte, K. Kuitunen, S. Kilpelainen, F. Tuomisto, I. Capan, Divacancies at room temperature in germanium, Thin Solid Films 518 (2010) 2314.
  35. B. Novoselnik, M. Pilipovic, R. Jacimovic, B. Pivac, R. Slunjski, I. Capan, Capacitance changes in neutron irradiated n-type silicon; the flux effect, Nuclear Instrum. And Methods in Phys. Res. B, 268 (2010) 2400.
  36. M. Buljan, J. Grenzer, V.Holý, N. Radic,T. Misic-Radic, S. Levichev, S. Bernstorff, B. Pivac and I. Capan, Structural and charge trapping properties of two bi-layer (Ge+SiO2)/SiO2 films deposited on rippled substrate, Applied Physics Letters 97 (2010) 163117.
  37. Robert Slunjski, Ivana Capan, Branko Pivac, Alessia Le Donne, Simona Binetti, Effects of low-temperature annealing on polycrystalline silicon for solar cells, Solar Energy Materials and Solar Cells, 95 (2011) 559.
  38. I. Capan, B.Pivac, and R. Slunjski, Electrical characterisation of Si-SiO2 structures, physica status solidi (c) 8 (2011) 816.   
  39. Ivana Capan, Maja Buljan, Tea Misic-Radic, Branko Pivac, Nikola Radic, Joerg Grenzer, Vaclav Holy, S. Levichev, and Sigrid Bernstorff, Electrical Characterization of Ge Nanocrystals in Oxide Matrix, Materials Research Society Symposium Proceedings 1305 (2011) 53.
  40. I. Capan, J. Bak-Misiuk, B. Pivac, P. Dubček, A. Misiuk, S. Bernstorff and P.Romanowski, Defects in silicon introduced by helium implantation and subsequent annealing, Radiation Physics and Chemistry 80 (2011) 1099.
  41. Željko Pastuović, Ettore Vittone, Ivana Capan, Milko Jakšić, Probability of divacancy trap production in silicon diodes exposed to focused ion beam irradiation, Applied Physics Letters 98 (2011) 092101.
  42.  Ivana Capan, Vesna Janicki, Radojko Jacimovic, and Branko Pivac, C-V and DLTS Studies of Radiation Induced Si-SiO2 Interface Defects, Nuclear Instrum. And Methods in Phys. Res. B 282 (2012) 59.
  43. J. Martín-Sánchez, A. Chahboun, M. J. M. Gomes, A. G. Rolo, B. Pivac, and I. Capan, Carrier storage in Ge nanoparticles produced by pulsed laser deposition, physica status solidi RRL 6 (2012) 223.
  44. E. M. F. Vieira, J. Martín-Sánchez, A. G. Rolo, A. Parisini, M. Buljan, I. Capan, E. Alves, N. P. Barradas, O. Conde, S. Bernstorff, A. Chahboun, S. Levichev, M. J. M. Gomes, Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe/SiO2 superlattice,  Journal of Applied Physics 111 (2013) 104323.
  45.  Branko Pivac, Pavo Dubček, Ivana Capan, Hrvoje Zorc, Jasna Dasović, Sigrid Bernstorff, Marvin Wu, Branislav Vlahovic, GISAXS study of Si nano structures in SiO2 matrix for solar cell applications, physica status solidi A 210 (2013) 755.
  46. J. Martín-Sánchez, I. Capan, A. Chahboun, S.R.C. Pinto, E.M.F. Vieira, A.G. Rolo, and M.J.M. Gomes, Shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition: morphological, structural and charge trapping properties, Applied Surface Science 280 (2013) 632.
  47. Ž. Pastuovic, I. Capan , R. Siegele , R. Jacimovic, J. Forneris, D.D. Cohen, E. Vittone, Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon, Nuclear Instrum. And Methods in Phys. Res 332 (2014) 298.
  48. I Capan, A. Carvalho and J. Coutinho, Silicon and germanium nanocrystals: properties and characterization (review), Beilstein J. Nanotechnol.  5 (2014) 1787.
  49. Željko Pastuović, Ivana Capan, David D. Cohen, Jacopo Forneris, Naoya Iwamoto, Takeshi Ohshima, Rainer Siegele, Norihiro Hoshino and Hidekazu Tsuchida, Radiation Hardness of n-type SiC Schottky Barrier Diodes Irradiated with MeV He Ion Microbeam, Nuclear Instrum. And Methods in Phys. Res B348 (2015) 233  
  50. I. Capan, Ž. Pastuović, R. Siegele, R. Jačimović, Vacancy-related defects in n-type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range, Nuclear Instrum. And Methods in Phys. Res B 372 (2016) 156
  51. I.Capan, A. Carvalho and J. Coutinho, An outlook on silicon nanocrystals for optoelectronics, Journal of Green Engineering 5 (2016) 49
  52. Z. Pastuovic, M. Ionescu, E. Vittone, I. Capan, Accelerator-Based Nuclear Techniques for Processing and Characterization of Oxide Semiconductors for Solar Energy Conversion, Solid State Phenomena,  253 (2016) 59-142
  53. Nikša Krstulović, Polona Umek, Krešimir Salamon, and Ivana Capan, Synthesis of Al-doped ZnO nanoparticles by laser ablation of ZnO:Al2O3 target in water, Mater. Res. Express 4 (2017) 105003.
  54. Z. Pastuovic, I. Capan, S. Sato, T. Ohshima, T. Brodar, R. Siegele, Deep level defects in 4H-SiC introduced by ion implantation: The role of single ion regime, J. Phys.: Condens. Matter 29 (2017) 475701.
  55. Ivana Capan, Tomislav Brodar, Takeshi Ohshima, Shin-ichiro Sato, Takahiro Makino, Željko Pastuović, Rainer Siegele, Luka Snoj, Vladimir Radulović, José Coutinho, Vitor J. B. Torres, Kamel Demmouche, Deep level defects in 4H-SiC epitaxial layers, Materials Science Forum  924 (2018) 225.
  56. Nikša Krstulović, Krešimir Salamon, Ognjen Budimlija, Janez Kovač, Jasna Dasović, Polona Umek, Ivana Capan, Parameters optimization for synthesis of Al-doped ZnO nanoparticles by laser ablation in water, Applied Surface Science 440 (2018) 916.
  57. Ivana Capan, Tomislav Brodar, Takeshi Ohshima, Shin-ichiro Sato, Takahiro Makino, Željko Pastuović, Rainer Siegele, Luka Snoj, Vladimir Radulović, José Coutinho, Vitor J. B. Torres, Kamel Demmouche, Double negatively charged carbon vacancy at the h- and k- sites in 4H-SiC: Combined Laplace-DLTS and DFT study, Journal of Applied Physics 123 (2018) 161597.
  58. M.Mozetič et al, Recent developments in surface science and engineering, thin films, nanoscience, biomaterials, plasma science, and vacuum technology (review paper), Thin Solid Films 660 (2018) 120.
  59. T.A. Hamed et al, Multiscale in modelling and validation for solar photovoltaics, EPJ Photovoltaics 9 (2018) 10.
  60. Tomislav Brodar, Ivana Capan, Vladimir Radulović, Luka Snoj, Željko Pastuović, José Coutinho, and Takeshi Ohshima, Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC, Nuclear Inst. and Methods in Physics Research B 437 (2018) 27.
  61. Ivana Capan, Tomislav Brodar, Jose Coutinho, Takeshi Ohshima, Vladimir Markevich, Anthony Peaker, Acceptor levels of the carbon vacancy in 4H-SiC: combining Laplace deep level transient spectroscopy with density functional modeling, Journal of Applied Physics 124 (2018) 245701.

 

 

 

 

Talk presentations:

 

1.  «Neutron Irradiation Induced Defects in Silicon; Interstitial clusters?», Hydrogen in Silicon Meeting, 21.-22.11.2002., UMIST, Manchester, UK.

2. «Temperature dependent defect production in gamma irradiated silicon», 17-29.07.2004., Radiation Effects in Solids, Erice, Italy

3. «Electrically active defects induced by neutron irradiation in silicon», 25.-29.09.2004. 1st CADRES Workshop, Catania, Italy

4. «Germanij – poluvodič budućnosti?», 01.02.2007. Zavodski kolokvij, Zavod za primijenjenu fiziku, FER, Zagreb (invited seminar)

5.  «Električki aktivni defekti u siliciju i germaniju uvedeni zračenjem», 17.05.2007. Seminar ZFM-a, IRB, Zagreb

6.  “Structural properties of Ge nanocrystals embedded in SiO2”, 21.-25.05.2007, MIPRO, Opatija.

7. “Radijacioni defekti u germaniju”, 05.06.2008., Pristupno predavanje, IRB, Zagreb

8. "Laplace transform spectroscopy studies of radiation induced defects in germanium", 22-26.09.2008, JVC-12, Balatonalmadi, Hungary (invited talk)

9.  “Nanostructures for the next generation of semiconductor devices”, 29-30.06.2009, Croatian - Japanese Workshop on Materials Science, Zagreb, Croatia

10. “Germanium…new perspectives“, 30.09.2009, Groupe de Physique des Matériaux, Université de Rouen, Saint Etienne du Rouvray, France (invited seminar)

11. «Radiation induced defects in silicon and germanium », 23.10.2009, Department of Environmental Sciences, Jozef Stefan Institute, Ljubljana, Slovenia (invited seminar)

12. “Laplace DLTS”, 25.11.2009., Radionica-Nove napredne metode u istraživanju materijala, IRB-Zagreb

13. “DLTS study of defects … from point-like defects to quantum dots”, 06.09.2010, LAAS-CNRS, Toulouse, France (invited seminar)

14. «Electrical characterization of semiconductor nanocrystals: The role of interface», 02-03.06.2011., 18th Vacuum Meeting, Bohinj, Slovenija (invited talk).

15. «Electrical characterization of semiconductor nanocrystals», 08.07.2011, University of Minho, Braga, Portugal (invited seminar)

16. «Electrical characterization of semiconductor nanocrystals», 9-12.11.2011, COST NanoTP, Trieste, Italy (invited talk)

17. »Electrically active defects induced by radiation», 12.04.2012, Jozef Stefan Institute, Ljubljana, Slovenia (seminar)

18. «Electrically active defect in semiconductors induced by radiation», 7-10.05.2012, 2nd RBI Detector Workshop, Plitvice Lakes, Croatia (talk)

19. «Electrical characterization of interfaces and embedded nanocrystals», 21.06.2012, Institut für Materialphysik, Münster, Germany (seminar)

20. «Radiation induced defects: electrical and optical study», 13-24.08.2012., Joint ICTP-IAEA Workshop on Physics of Radiation Effect and its Simulation for Non-Metallic Condensed Matter, ICTP,Trieste, Italy (invited lecturer)

21. «Generation of vacancy-related defects during focused swift-ion beam implantation of silicon», 8-10.10.2012, Silicon Detector Workshop, Split, Croatia (talk)

22. «Kvantne točke; umjetni atomi», 18-20.04.2013., Otvoreni dani IRB-a, Zageb

23. «Nanočestice», 05.02.2014., Hrvatski zavod za zaštitu zdravlja i sigurnost na radu, Zagreb, Hrvatska (invited seminar)

24. «Kvantne točke», 14.6.2014., Đir po Ruđeru, Zagreb, Hrvatska

25. „Capacitance transient spectroscopy“, 27.04.2015, Institut des Matériaux Jean Rouxel, Nantes, France (seminar)

26. „Poluvodički nanokristali; Od memorija do solarnih ćelija“, 14.12.2015., Sveučilište u Osijeku

27. „e-SiCure project“, 29-30.03.2017, Detector workshop, University of York, York, UK

28. „Kako rade detektori?“, 13.05.2017., ODI2017, Institut Ruđer Bošković

29. „Radiation hardness of 4H-SiC epitaxial layers“, 18 – 19 May, 2017, 24th International Scientific Meeting on Vacuum Science and Technique, Zadar, Croatia (invited talk)

30. „Electrically active defects in 4H-SiC“, 20-22 November 2017, CERN, RD50 meeting

31. „Detektori“, 27.12.2017, PMF, Univerzitet u Tuzli, BIH (invited seminar)

32. „Electrically active defects in semiconductors“, May 30, 2018, QST, Takasaki, Japan

33. „e-SiCure project“, NATO ARW on Explosives Detection, 17-18 October 2018, Florence, Italy (invited talk)

34. „Electrically active defects: Laplace DLTS study“, 30 November 2018, ANSTO, AUS

 

 

 

Training:

 

  • October – December 2002, Centre for Electronic Materials, UMIST, UK
  • March – June 2003,Centre for Electronic Materials, UMIST, UK
  • October 2005, Centre for Electronic Materials, Devices and Nanostructures, University of Manchester, UK
  • February 2006, Centre for Electronic Materials, Devices and Nanostructures, University of Manchester, UK
  • June 2007, Microelectronics & Nanostructures Group, University of Manchester, UK

 

 

Short visits:

 

  • 07-14.10.2006, InESS-CNRS, Strasbourg, France
  • 17-21.21.2005, PHASE-CNRS, Strasbourg, France
  • 27-29.11.2008, Jozef Stefan Institute, Slovenia
  • 06-09.06.2009, Jozef Stefan Institute, Slovenia
  • 25.09-01.10.2009, Groupe de Physique des Matériaux, Université de Rouen, Saint Etienne du Rouvray, France
  • 22-24.10.2009, Jozef Stefan Institute, Slovenia
  • 22.04 - 02.05.2010, University of Manchester, UK
  • 17-18.06.2010, Jozef Stefan Institute, Slovenia
  • 02.07-08.07.2010, Groupe de Physique des Matériaux, Université de Rouen, Saint Etienne du Rouvray, France
  • 05.09-08.09.2010, LAAS-CNRS, Toulouse, France
  • 13.06 - 26.06.2011, University of Manchester, UK
  • 07.07-10.07.2011, University of Minho, Braga, Portugal
  • 18.03 - 24.03.2012, University of Manchester, UK
  • 11.04-14.04.2012, Jozef Stefan Institute, Slovenia
  • 18.06-25.06.2012, Institut für Materialphysik, Münster, Germany
  • 04.04-06.04.2013, Jozef Stefan Institute, Slovenia
  • 24.07-31.17.2013, Institut für Materialphysik, Münster, Germany
  • 25.10- 28.10.2013, Jozef Stefan Institute, Slovenia
  • 10.07-13.07.2014., Jozef Stefan Institute, Slovenia
  • 25.10- 27.10.2014, Jozef Stefan Institute, Slovenia
  • 26.04-30.04.2015, Institut des Matériaux Jean Rouxel, Nantes, France
  • 10.07-12.07.2015., Jozef Stefan Institute, Slovenia
  • 08.11-11.11.2015, Institut des Matériaux Jean Rouxel, Nantes, France
  • 05.12-07.12.2015., Jozef Stefan Institute, Slovenia
  • 02.07-07.07.2016, Institut des Matériaux Jean Rouxel, Nantes, France
  • 12.11-18.11.2017, University of Manchester, UK

 

 

 

 

Poster presentations at conferences/workshops/schools:

 

1.     Scientific meeting of Croatian Physical Society, 1-3.12.1999.,Zagreb,Croatia.

2.     8th Joint Vacuum Conference, 4-9.6.2000., Pula, Croatia.

3.     8th Joint meeting of Croatian and Slovenian Vacuum societies, 23.5.2001., Brdo pri Kranju, Slovenija.

4.     Scientific meeting of Croatian Physical Society, 5-7.12.2001.,Zagreb,Croatia.

5.     9th Joint Vacuum Conference, 16-20.6.2002., Seggau, Austria.        

6.     New Directions in Mesoscopic Physics (Towards Nanoscience), 20.7.-1.8.2002., Erice, Italy.

7.     The Physics of Group IV Semiconductors, 07.-10.04.2003., Exeter, UK.

    1. Radiation Effects in Solids, 17-29.07.2004., Erice, Italy

9.     E-MRS Spring Meeting 2005, Strasbourg, France.

10.  E-MRS Spring Meeting 2006, Nice, France.

11.  2nd GISAXS Workshop, DESY, Hamburg, Germany.

12.  E-MRS Spring Meeting 2010, Strasbourg, France.

13.  MRS Fall Meeting, Boston, MA, USA.

14.  E-MRS Spring Meeting, 2011, Nice, France.

15.  E-MRS Spring Metting 2012, Strasbourg, France

16.  COST NanoTP, Berlin, Germany, 8-12.12.2012.

17.  E-MRS Spring Metting 2013, Strasbourg, France

18.  COST NanoTP, Mons, Belgium, September 2013

19.  COST NanoTP, Nantes, France, 2-5 April 2014

20.  Joint meeting of Croatian and Slovenian Vacuum societies, 08.-09.05.2014., Samobor, Hrvatska

    1. E-MRS Spring Meeting 2016, Lille, France
    2. ICSCRM, 22-25.09.2017, Washington DC, USA

23.  E-MRS Spring Meeting 2018, Strasbourg, France

 

 

 

Schools/Workshops:

  

o   22.4.-24.5.2002., School on Synchrotron Radiation, ICTP, Trieste, Italy.

    • 20.7.-1.8.2002., New Directions in Mesoscopic Physics (Towards Nanoscience), Erice, Italy.
    • 31.03.-01.04.2003., Introduction to Ion Beam Technology, University of Surrey, Guildford, UK.

o   17-29.07.2004., Radiation Effects in Solids, Erice, Italy

o   05-10.09.2004. , Nanoscience and Nanotechnologies, Losinj Summer School, Mali Lošinj, HR

o   07-18.02.2005., Winter College on Optics and Photonics in Nanoscience and Technology, ICTP, Trieste,Italy.

o   07.-12.03.2005., 4th European Winter School (NESY 2005), Research with Neutron And Synchrotron Radiation, Planneralm, Austria

    • 22-27.10.2006., 50th IUVSTA Workshop, Dubrovnik, HR
    • 09.-11.05.2007. 2nd GISAXS Workshop, DESY, Hamburg, Germany