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Dr. Mile Ivanda

Head of laboratory
Head of laboratory
+385 1 456 0928
Internal phone number
Academic title
Distinguished Professor
Bijenička cesta 54, Zagreb
Curriculum vitae


Current projects:

2019-2022 Cooperation Agreement with the City of Zagreb for the design of clean room for the Center of Excellence for Advanced Materials and Sensors, Research Unit for New Functional Materials, Laboratory for Molecular Physics and Synthesis of New Materials. Principal investigator, HRK 980,000.00

2019-2021 Bilateral project Functionalized silicon and plasmon for biological sensors of cooperation between the Republic of Croatia and Hungary. Principal investigator, EUR 6500.00

2017-2022 Center for Excellence for Advanced Materials and Sensors, a project co-financed by the Government of the Republic of Croatia and the European Union through the European Regional Development Fund - Operational Program for Competitiveness and Cohesion (KK. Principal investigator, 1.3M euros

2015-2019 Hybrid Silicon Nanostructure for Sensors, Funding Source: Croatian Scientific Foundation, Project Number: IP-2014-09-7046. Principal investigator, HRK 996,000.00

2014-2023 New Functional Materials, Center of Excellence for Advanced Materials and Sensors, Funding Source: Ministry of Science and Technology of the Republic of Croatia and European Union Structural Funds. Principal investigator, about 260,000 HRK per year.

2016-2019 Contract for the examination of thin semiconductor films, Funding source: Crodux plin d.d. Principal investigator, HRK 150,000.00.

Research Areas


2010-2013 “Physics and application of nanostructures and bulk materials”, Leader: M. Ivanda, Funding source: Ministry of Science and Technology of Croatia.

2010-2013 “Novel silicon based materials for optoelectronics”; Post. doc. project of D. Ristić as a result of collaboration of the research groups of M. Ivanda and M. Ferrari; Funding source: FP7 "People" - "Campaign Marie Curie" –  COFUND, by Autonome Province Trento (PAT project).
2007-2010 “Physics and application of nanostructures and bulk materials”, Leader: K. Furić, Associates: M. Ivanda et al., Funding source: Ministry of Science and Technology of Croatia.
2002-2006 “Physics and application of nanostructures”, Leader: K. Furić, Associates: M. Ivanda et al., Funding source: Ministry of Science and Technology of Croatia.
2005 “Structure and optical properties of nanocrystaline silicon and cadmium sulfide – selenide for optoelectronics”; Leader: M. Ivanda; Associates: G.C. Righini et al., Funding source: NATO.
2003-2005 “Research on disordered materials; nano-optical layers”, Leader: M. Ivanda; Associates: Z. Crnjak-Orel et al.; Croatian-Slovenian bilateral project financed by the Ministry of Science and Technology of Croatia.
2002-2004 “Implementation and development of the LPCVD process” Leader: M. Ivanda; Associates: K. Furić et al., Funding source: Ministry of Science and Technology of Croatia in the program of the technological development of Croatia.
2000-2002 “Study by Raman and optical techniques of nanostructures synthesized by ion bombardment”, Leader: G. Mariotto; Associates: M. Ivanda et al., Funding source: Instituto Nazionale per la Fisica della Materia - MURST within the program COFIN-98.
1996-2002 “Scattering of light, interaction and dynamics of matter”, Leader: K. Furić, Associates: M. Ivanda et al., Funding source: Ministry of Science and Technology of Croatia.
1995-1996 “Structure and metastable states of a-Si:H and a-SiC:H", Leader: M. Ivanda; Associates: W. Kiefer et al.; Funding source: Alexander von Humbolt Foundation.
1991-1996 “Vibrations phenomena and interactions in condensed matter”, K. Furić, Associates: M. Ivanda et al., Funding source: Ministry of Science and Technology of Croatia.
1995 “Selektive Reaktionen Metall - Aktivierter Moleküle” Leader:W. Kiefer; Associates: M. Ivanda, et al., Funding source: Deutsche Forschung Gemeinschaft.
1993 “Structural properties and metastable states of a-Si: and a-SixC1-x:H”, Leader: M. Ivanda; Associates: W. Kiefer et al.; Funding source: European Community.

Awards and Achievements

2007 MIPRO Conference, Award for the best scientific paper
2005 NATO Research Award
1993-1995 Alexander von Humboldt Fellowship Award
1992 European Community Postdoctoral Fellowship Award


2007-2011 M. Ivanda,“Experimental methods of physics in natural science”, Inter-university postgraduate study “Molecular Biosciences», Josipa Jurja Strossmayera University in Osijek, Ruđer Bošković Institute in Zagreb and University of Dubrovnik.
2006-2011 K. Furić and M. Ivanda “Basics and applications of nanostructures”, University of Zagreb's scientific postgraduate study «INŽENJERSKA KEMIJA” at Faculty of Chemical engineering and technology.
2005 M. Ivanda, “Experimental methods of modern physics”, Graduate study of physics at the Faculty of Natural Sciences and Mathematics, University of Zagreb.
1987-1988 Physical Practicum III, Graduate study of physics at the Faculty of Natural Sciences and Mathematics, University of Zagreb.


Books and book chapters

Book chapters

Journal articles

Scientific and review papers

Conference proceedings papers

Scientific conference proceedings papers

Membership in professional associations / societies

2008-12 Deputy Chairman of the Scientific Council of Physics of RBI.
2011 President of the Scientific Board of the Croatian Physical Society.
1997-2001 Treasurer of the Croatian Physical Society
1996 Member of the European Physical Society
1996 Member of the Croatian Physical Society
1990 Member of the Croatian Astronomical Society

M. Ivanda has published 164 papers with 2600 citations and Hirsh index H=25 (under the base Web of Science) or 260 papers with 3600 citations and Hirsh index H=29 (under the base Google Scholar) in the area of structure and vibrational dynamics of semiconductor and oxide nanostructures and development of new sensing techniques.




Mile Ivanda’s 5-year track-record,  Five publications (*-corresponding author):


1.    T Janči, D Valinger, JG Kljusurić, L Mikac, S Vidaček, M Ivanda*, Determination of histamine in fish by Surface Enhanced Raman Spectroscopy using silver colloid SERS substrates, Food Chemistry 224, 48-54, (2017). IF=4.85, Cit.=25.

2.    L Mikac, M Ivanda*, V Đerek, M Gotić, Influence of mesoporous silicon preparation condition on silver clustering and SERS enhancement, J. Raman Spectr. 47, 1036-1041, 2016. IF=3.01, Cit.=14.

3.    V. Đerek, E. D. Głowacki, M. Sytnyk, W. Heiss, M. Marciuš, M. Ristić, M. Ivanda*, and N. S. Sariciftci, Enhanced near-infrared response of nano- and microstructured silicon/organic hybrid photodetectors, Applied Physics Letters 107, 083302 (2015). IF=3.41, Cit.=16.

4.    M Kosović, M Balarin, M Ivanda, V Đerek, M Marciuš, M Ristić, O Gamulin, Porous silicon covered with silver nanoparticles as surface-enhanced Raman scattering (SERS) substrate for ultra-low concentration detection, Applied spectroscopy 69 (12), 1417-1424, 2015. IF=1.52, Cit.=18.

5.    D. Ristic, M. Mazzola, A. Chiappini, A. Rasoloniaina, P: Féron, R. Ramponi, G. Righini, G. Cibiel, M.Ivanda*, and M. Ferrari, Tailoring of the free spectral range and geometrical cavity dispersion of a microsphere by a coating layer, Optics Letters 39, 5173–5176 (2014), IF=3.39, Cit.=22.

The research topics:

The research is focused on nanostructural silicon thin films for advanced applications. The Low Pressure Chemical Vapor Deposition (LPCVD) and Physical Vapor Deposition (PVD) were implemented and developed at Ivanda’s group. The different type of silicon based thin films are preparing like silicon reach oxide, silicon reach nitride, amorphous silicon, polycrystalline silicon, doping with boron, phosphorus, erbium and europium, silicon carbide and porous silcon by electrochemical etching. The structural, optical, electrical and transport properties are investigating with a goal of development of doped silicon nanostructured films (dots, wires, porous structure) for thermoelectric elements (Peltier cooler and heater, low temperature sensor); silicon nanocrystals thin films doped with rare earths for photonics (spherical microresonators, optical amplifiers, lasers), silicon carbide thin films on silicon and porous silicon for gas and/or chemical sensing. Beside, different aspects of Raman scattering as a powerful analytic tool has been developed: low frequency Raman scattering for determination of size distribution of nanoparticles, portable Raman spectrometer as well as new techniques for SERS spectroscopy.



Nanostructured silicon for thermoelectrics

Thermoelectric (TE) devices are able to convert the waste heat form combustion engines, solar energy or from radioactive sources into electrical or some other kind of energy on a pure and non-pollutant way. Silicon, the basic material of semiconductor electronics, is widely available, comparatively cheap, ecologically friendly and technologically well developed. Those are reasons enough to seek a marriage between silicon and thermoelectric properties. Recently, Ivanda’s group has found a large Seebeck coefficient of 200 uV/K (the main physical property of TE materials), in a heavily boron doped polysilicon sample obtained by the LPCVD method. By using the LPCVD method, they are producing various kinds of doped silicon nanostructures (dots and wires) in order to obtain those with good TE properties. They also search for advanced TE properties on nanoporous silicon prepared by anodisation techniqe.


Novel silicon based materials for fotonics

The research include the production and the characterization of novel silicon based materials for optoelectronics, namely silicon rich oxides (nitrides), silicon oxide /silicon rich oxide (nitride) multilayers, nanocrystalline silicon and europium doped silicon nanocrystalls in silica layers. All of these new materials will be studied in combination with silica microspheres. These thin films on silica microspheres will be investigated in order to examine different non-linear properties under the high laser light intensity excitation conditions. The Stimulated Raman Scattering and optical amplification being the most promising for the construction of silicon-based laser will be searched on this silicon based thin films deposited on silica microspheres. The project includes cooperation between the IFN-CNR in Trento and the Ruđer Bošković Institute in Zagreb under the 150.000 euros value research project.


Porous silicon for sensors

Silicon Epitaxy and Poly-Silicon layers. Silicon, an indirect gap semiconductor, can emit light with 10% efficiency at room temperature, provided that it is in the form of low-dimensional (quantum dots or wires) nanostructures. Ivanda's group is producing porous silicon from three types of silicon layers: Silicon On Insulator (SOI), Silicon Epitaxy and Poly-Silicon layers. Anodizing with DC and AC current of these layers creates new morphology that show intense photoluminescence. The research objectives are new simple and inexpensive techniques for preparation of porous silicon for the development of high sensitive gas sensors, thermoelectric and biocompatible materials. The structures with novel morphologies that exhibit strong photoluminescence were discovered. The luminescence mechanisms and the relationship between bandgap energy, luminescence energy, and size of nanostructures are investigating.


Development of new techniques of Raman spectroscopy

The group has significant contribution in development of Raman scattering technique in determination of size distribution of free nanoparticles, of the nanoparticles in matrices and more generally of the size distribution of various nanocomposite materials.  Besides, the portable Raman spectrometer and new methods of SERS spectroscopy are developing for versatile application in environmental, medicine and food analysis.

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