Mile Ivanda

Mile Ivanda

Dr., Head of Laboratory for Molecular Physics

Senior Scientist
+385 1 456 0928


Krilo 6/210

Bijenička cesta 54, Zagreb

CV_Form_HRZZ-Mile Ivanda-eng.doc 192.50 kB


1992 Ph.D., University of Zagreb. Title: "Structure and vibratory phenomena of amorphous silicon", Head: Dr. K. Furić.
1990 M.Sc., University of Zagreb. Title: "Investigation of the structural properties of amorphous silicon Raman spectroscopy", Head: Dr. K. Furić.
1986 B.Sc. in physics, University of Zagreb. Title: "Method of thermal wave in AC calorimetry", Head: Dr. Daniel Đurek.
1981-86 Study of engineering physics, University of Zagreb.
1980-81 Military Service
1980 Graduation, MIOC, Zagreb


2010-2013 “Physics and application of nanostructures and bulk materials”, Leader: M. Ivanda, Funding source: Ministry of Science and Technology of Croatia.

2010-2013 “Novel silicon based materials for optoelectronics”; Post. doc. project of D. Ristić as a result of collaboration of the research groups of M. Ivanda and M. Ferrari; Funding source: FP7 "People" - "Campaign Marie Curie" –  COFUND, by Autonome Province Trento (PAT project).
2007-2010 “Physics and application of nanostructures and bulk materials”, Leader: K. Furić, Associates: M. Ivanda et al., Funding source: Ministry of Science and Technology of Croatia.
2002-2006 “Physics and application of nanostructures”, Leader: K. Furić, Associates: M. Ivanda et al., Funding source: Ministry of Science and Technology of Croatia.
2005 “Structure and optical properties of nanocrystaline silicon and cadmium sulfide – selenide for optoelectronics”; Leader: M. Ivanda; Associates: G.C. Righini et al., Funding source: NATO.
2003-2005 “Research on disordered materials; nano-optical layers”, Leader: M. Ivanda; Associates: Z. Crnjak-Orel et al.; Croatian-Slovenian bilateral project financed by the Ministry of Science and Technology of Croatia.
2002-2004 “Implementation and development of the LPCVD process” Leader: M. Ivanda; Associates: K. Furić et al., Funding source: Ministry of Science and Technology of Croatia in the program of the technological development of Croatia.
2000-2002 “Study by Raman and optical techniques of nanostructures synthesized by ion bombardment”, Leader: G. Mariotto; Associates: M. Ivanda et al., Funding source: Instituto Nazionale per la Fisica della Materia - MURST within the program COFIN-98.
1996-2002 “Scattering of light, interaction and dynamics of matter”, Leader: K. Furić, Associates: M. Ivanda et al., Funding source: Ministry of Science and Technology of Croatia.
1995-1996 “Structure and metastable states of a-Si:H and a-SiC:H", Leader: M. Ivanda; Associates: W. Kiefer et al.; Funding source: Alexander von Humbolt Foundation.
1991-1996 “Vibrations phenomena and interactions in condensed matter”, K. Furić, Associates: M. Ivanda et al., Funding source: Ministry of Science and Technology of Croatia.
1995 “Selektive Reaktionen Metall - Aktivierter Moleküle” Leader:W. Kiefer; Associates: M. Ivanda, et al., Funding source: Deutsche Forschung Gemeinschaft.
1993 “Structural properties and metastable states of a-Si: and a-SixC1-x:H”, Leader: M. Ivanda; Associates: W. Kiefer et al.; Funding source: European Community.

Awards and Achievements

2007 MIPRO Conference, Award for the best scientific paper
2005 NATO Research Award
1993-1995 Alexander von Humboldt Fellowship Award
1992 European Community Postdoctoral Fellowship Award


2007-2011 M. Ivanda,“Experimental methods of physics in natural science”, Inter-university postgraduate study “Molecular Biosciences», Josipa Jurja Strossmayera University in Osijek, Ruđer Bošković Institute in Zagreb and University of Dubrovnik.
2006-2011 K. Furić and M. Ivanda “Basics and applications of nanostructures”, University of Zagreb's scientific postgraduate study «INŽENJERSKA KEMIJA” at Faculty of Chemical engineering and technology.
2005 M. Ivanda, “Experimental methods of modern physics”, Graduate study of physics at the Faculty of Natural Sciences and Mathematics, University of Zagreb.
1987-1988 Physical Practicum III, Graduate study of physics at the Faculty of Natural Sciences and Mathematics, University of Zagreb.

Featured Publications

  1. M. Ivanda, Raman-scattering measurements and fracton interpretation of vibrational properties of amorphous silicon, Phys. Rev. B 46, 14893 (1992).
  2. M. Ivanda, I. Hartmann, and W. Kiefer, Boson peak in Raman spectra of amorphous gallium arsenide: Generalization to amorphous tetrahedral semiconductors, Phys. Rev. B 51, 1567 (1995).
  3. T. Bishof, M. Ivanda, et al., Linear and nonlinear Raman studies on CdSxSe1-x dopes glasses, J. Raman Spectr. 27, 297 (1996).
  4. U. V. Desnica,  I. D. Desnica, M. Ivanda, K. Furić and T. E. Haynes, Morphology of the implantation-induced disorder in GaAs studied by Raman spectroscopy and ion channeling, Phys. Rev. B 55, 16205 (1997).
  5. M. Ivanda, et al., Low temperature anomalies of cuprite, Cu2O, observed by Raman spectroscopy and x-ray powder diffraction, J. Raman Spectr. 28, 487 (1997).
  6. O. Gamulin, M. Ivanda, U. V. Desnica and K. Furić, Comparison of structural changes of amorphous silicon by thermal and cw laser annealing, J. Mol. Struct. 410-411, 249 (1997).
  7. S. Musić, M. Gotić, M. Ivanda, S. Popović, A. Turković, R. Trojko, A. Sekulić, and K. Furić, Chemical and microstructural properties of TiO2 synthesized by sol-gel procedure, Mater. Sci. & Engineering B 47, 33 (1997).
  8. M. Ivanda, et al., Resonance-effects in photo-luminescence froom deep traps in CdSxSe1-x doped glasses, J. Appl. Phys. 82, 3116-3119 (1997).
  9. O. Gamulin, M. Ivanda, U. V. Desnica, and K. Furić, Structural relaxation of amorphous silicon during thermal and cw laser annealing, J. Non-Cryst. Solids 227-230, 943 (1998).
  10. M. Ivanda, O. Gamulin, and W. Kiefer, Mechanism of Raman scattering in amorphous silicon, J. Mol. Struct. 480-481, 651 (1999).
  11. M. Ivanda, et al., XRD, Raman and FT-IR spectroscopic observations of nanosized TiO2 synthesized by the sol/gel method based on esterification reaction, J. Mol. Struct. 480-481, 645 (1999).
  12. M. Ivanda, et al., The effects of crystal size on the Raman spectra of nanophase TiO2, J. Mol. Struct. 480-481, 641 (1999).
  13. M. Ivanda, et al., Low Wavenumber Raman Scattering From Nanosized CdSxSe1-X Crystals Embeded In Glass Matrix, Phys. Rev. B 67, 235329 (2003).
  14. M. Ivanda,  et al., Raman Scattering Of Acoustical Modes Of Silicon Nanoparticles Embedded In Silica Matrix, J. Raman Spectroscopy 37, 161 (2006).
  15. M. Ivanda, K. Furić, S. Musić, M. Ristić, M. Gotić, D. Ristić, et al., Low Frequency Raman Scattering of Nanoparticles and Nanocomposite Materials, The review paper in the Special Issue: Raman Spectroscopy on Nanomaterials, J. Raman Spectroscopy 38, 647 (2007).
  16. M. Ivanda, H. Gebavi, D. Ristic, K. Furic, S. Music, M. Ristic, S. Zonja, P. Biljanovic, O. Gamulin, M. Balarin, et al., Silicon Nanocrystals By Thermal Annealing Of Silicon Reach Oxide Prepared By LPCVD Method, J. Mol. Struct. 834–836,  461 (2007).
  17. M. Balarin, O. Gamulin, M. Ivanda, V. Djerek, O. Celan, S. Music, M. Ristic, and K. Furic, Structure and optical properties of porous silicon prepared on thin epitaxial silicon layer on silicon substrates, J. Mol. Struct. 834–836465 (2007).
  18. D. Ristić, M. Ivanda, K. Furić, et al., Raman scattering on quadrupolar vibrational modes of spherical nanoparticles, J. Appl. Phys. 104, 073519 (2008). 
  19. S. Žonja, M. Očko, M. Ivanda, P. Biljanović, Low temperature resistivity of heavily boron doped LPVCD polysilicon thin films, J. Phys. D: Appl. Phys., 41, 162002 (2008).
  20. M. Buljan, I.B. Radović, U.V. Desnica, M. Ivanda, et al., Implantation conditions for diamond nanocrystal formation in amorphous silica, J. Appl. Phys., 104, 034315, (2008).
  21. M. Buljan, U.V. Desnica, M. Ivanda, et al.,Formation of three-dimensional quantum-dot superlattices in amorphous systems: Experiments and Monte Carlo simulations, Phys. Rev. B – Cond. Matter and Materials Phys., 79, 035310, (2009).
  22. G. Stefanic, S. Music, M. Ivanda, Phase development of the ZrO2-ZnO system during the thermal treatments of amorphous precursors,  J. Mol. Struct., 924-926, 225 (2009).
  23. D. Ristić, M. Ivanda, K. Furić , Application of the phonon confinement model on the optical Phonon mode of silicon nanoparticles, J. Mol. Struct., 924-926, 291 (2009).
  24. M. Balarin, O. Gamulin, M. Ivanda, M. Kosović, M. Ristić,  D. Ristić, M. Ristić, S. Musić, K. Furić, D. Krilov, J. Brnjas-Kraljević, Structural, optical and electrical characterization of porous silicon prepared on thin silicon epitaxial layer. J. Mol. Struct., 924-926,  285 (2009).    
  25. M. Buljan, ..., M Ivanda, O. Gamulin,, Generation of an ordered Ge quantum dot array in an amorphous silica matrix by ion beam irradiation. Physl Rev. B – Cond. Matt. and Mater. Phys. 81, 085321-1-085321-8 (2010).
  26. S.R.C. Pinto, A. Rolo, M.J.M. Gomes, M. Ivanda, et al. Formation of void lattice after annealing of Ge quantum dot lattice in alumina matrix,  Appl. Phys. Lett.. 97  173113-1-173113-3 (2010). 
  27. D. Ristić, V. Holý, M. Ivanda, Surface characterization of thin silicon-rich oxide films, J. Mol. Struct., 993, 214 (2011).
  28. O. Gamulin, M. Ivanda, V. Mitsa, M. Balarin, M. Kosović, Monitoring structural phase transition of (Ge2S3)x (As2S3)1-x chalcogenide glass with Raman spectroscopy,  J. Mol. Struct., 993, 264 (2011).
  29. Balarin, M., Gamulin, O., Ivanda, M., Kosović, M., Ristić, D., Ristić, M., Musić, S., Kosović M., Ristić, D., Ristić, M., Musić, S., Furić, K., Krilov, D., Optical properties of porous silicon on an insulator layer, J. Mol. Struct., 993, 208 (2011).
  30. G. Stefanic, I.I. Stefanic, S. Music, M. Ivanda, Structural and microstructural changes in the zirconium-indium mixed oxide system during the thermal treatment, J. Mol. Struct., 993, 277 (2011). 

Membership in professional associations / societies

2008-12 Deputy Chairman of the Scientific Council of Physics of RBI.
2011 President of the Scientific Board of the Croatian Physical Society.
1997-2001 Treasurer of the Croatian Physical Society
1996 Member of the European Physical Society
1996 Member of the Croatian Physical Society
1990 Member of the Croatian Astronomical Society


Mile Ivanda (50) is a Senior Scientist at Ruđer Bošković Institute. He was invited speaker on 13 international conferences. He gave a plenary lecture at the European Conference on Molecular Spectroscopy (EUCMOS) in 2008 year. He published 154 papers (cited 1140 times; H-index 19), among 127 are international refereed of which 79 are in WoS journals.

The research topics:

The research is focused on nanostructural silicon thin films for advanced applications. The Low Pressure Chemical Vapor Deposition (LPCVD) and Physical Vapor Deposition (PVD) were implemented and developed at Ivanda’s group. The different type of silicon based thin films are preparing like silicon reach oxide, silicon reach nitride, amorphous silicon, polycrystalline silicon, doping with boron, phosphorus, erbium and europium; porous silcon by electrochemical etching. The structural, optical, electrical and transport properties are investigating with a goal of development of doped silicon nanostructured films (dots, wires, porous structure) for thermo-electric elements (Peltier cooler and heater, low temperature sensor silicon nanocrystals thin films doped with rare earths for photonics (spherical microresonators, optical amplifiers, lasers),) and porous silicon for biological and chemical sensing. Beside, different aspects of Raman scattering as a powerfull analytic tool has been developed.

Functionalized silicon nanostructures as novel thermoelectric material 

The problem of energy in the world has provoked an increased interest, especially afterKyoto’s Protocol, on exploitation of renewable and waste energy. Thermoelectric (TE) devices are able to convert the waste heat form combustion engines, solar energy or from radioactive sources into electrical or some other kind of energy on a pure and non pollutant way. Silicon, the basic material of semiconductor electronics, is widely available, comparatively cheap, ecologically friendly and technologically well developed. Those are reasons enough to seek a marriage between silicon and thermoelectric properties. Recently, Ivanda’s group has found a large Seebeck coefficient of 200 uV/K (the main physical property of TE materials), in a heavily boron doped polysilicon sample obtained by the LPCVD method. By using the LPCVD method, they are producing various kinds of doped silicon nanostructures (dots and wires) in order to obtain those with good TE properties. They also search for advanced TE properties on nanoporous silicon.

Novel silicon based materials for optoelectronics 

The research include the production and the characterization of novel silicon based materials for optoelectronics, namely silicon rich oxides (nitrides), silicon oxide /silicon rich oxide (nitride) multilayers, nanocrystalline silicon and europium doped silicon nanocrystalls in silica layers. All of these new materials will be studied in combination with silica microspheres. These thin films on silica microspheres will be investigated in order to examine different non-linear properties under the high laser light intensity excitation conditions. The Stimulated Raman Scattering and optical amplification being the most promising for the construction of silicon-based laser will be searched on this silicon based thin films deposited on silica microspheres. The project includes cooperation between the IFN-CNR inTrentoand the Ruđer Bošković Institute inZagrebunder the 150.000 euros value research project.

Porous silicon prepared from Silicon On Insulator

Silicon Epitaxy and Poly-Silicon layers. Silicon, an indirect gap semiconductor, can emit light with 10% efficiency at room temperature, provided that it is in the form of low-dimensional (quantum dots or wires) nanostructures. Ivanda's group is producing porous silicon from three types of silicon layers: Silicon On Insulator (SOI), Silicon Epitaxy and Poly-Silicon layers. The structures with novel morphologies that exhibit strong photoluminescence were discovered. The luminescence mechanisms and the relationship between bandgap energy, luminescence energy, and size of nanostructures are investigating. The objectives of such research are to introduce new preparation techniques of visible light emitting Si- materials and to select the most promising among the low-cost technological routes; to predict for these materials whether an efficient photo and electroluminescence is feasible and its potential for device application; to develop the technologies for porous silicon surface modification in order to ensure its biocompatibility.

Development of new methods and techniques of Raman scattering

The group has significant contribution in development of Raman scattering technique in determination of size distribution of free nanoparticles, of the nanoparticles in matrices and more generally of the size distribution of various nanocomposite materials.  Besides, the portable Raman spectrometer is developing for versatile application in environmental, medicine and food analysis.

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