Skip to main content

Silicon thermoelectric element

Thermoelectric (TE) devices are able to convert the waste heat form combustion engines,
solar energy or from radioactive sources into electrical or some other kind of energy on a
pure and non pollutant way. Silicon, the basic material of semiconductor electronics, is
widely available, comparatively cheap, ecologically friendly and technologically well
developed. Those are reasons enough to seek a marriage between silicon and
thermoelectric properties. Recently, Ivanda’s group has found a large Seebeck coefficient
of 200 uV/K (the main physical property of TE materials), in a heavily boron doped
polysilicon sample obtained by the LPCVD method. By using the LPCVD method, they are
producing various kinds of doped silicon nanostructures (dots and wires) in order to obtain
those with good TE properties. They also search for advanced TE properties on nanoporous
silicon prepared by anodisation techniqe.

Laboratory for Molecular Physics and Synthesis of New Materials

This site uses cookies.

Some of these cookies are essential, while others help us improve your experience by providing insights into how the site is being used.

For more detailed information on the cookies we use, please check our Privacy Policy.

  • Necessary cookies enable core functionality. The website cannot function properly without these cookies, and can only be disabled by changing your browser preferences.