• February 2001:  B.Sc. in Physics, University of Zagreb, Thesis: Influence of structural defects on oxygen and carbon complexes in silicon, Thesis supervisor: dr. Branko Pivac
• September 2004: M.Sc. in Physics,UniversityofZagreb, Thesis: Temperature-Dependent Defect Production in g-irradiated Silicon, Thesis supervisor: dr. Branko Pivac
• November 2006: Ph.D. in Physics,UniversityofZagreb, Thesis: Electrically active defects in silicon and germanium induced by radiation, Thesis supervisors: dr. Branko Pivac and prof. Anthony R. Peaker (This work has been done at Rudjer Boskovic Institute & The University of Manchester)

• Atom probe tomography and electrical characterization of doping in Germanium (COGITO Croatian-French bilateral project 2009-2010) - principal investigator
• Silicon nanocrystals solar cells ... Properties and characterization (Unity Through Knowledge Fund – Young Researchers Program; 01.10.2009 - 30.09.2011) – principal investigator
• COST Action MP 0901: Designing Materials for Nanodevices – from Theory to Practice (NanoTP) – The coordinator  from Croatia
• Investigation of freestanding silicon nanocrystals (Croatian Academy of Sciences and Arts, 2011-2012) – principal investigator
• Doping of semiconductor nanocrystals by neutron transmutation method (CRO-SLO, 2012-2013) - principal investigator
• Comparison between electrical and structural properties of doped germanium nanocrystals (Croatian-German bilateral project 2012-2013) -principal investigator

• 1999: Rector’s award for the best student scientific work
• 2002-2003: Scholarship of the British Scholarship Trust
• 2006: National Science Award for Junior Researchers

• 2001-2002: Teaching Assistant – Exercises, General Physics I, II; Faculty of Electrical Engineering and Computing,UniversityofZagreb
• 2005-2006: Teaching Assistant - General Physics I; Faculty of Electrical Engineering and Computing,UniversityofZagreb
• 2006-2007: Teaching Assistant - General Physics I, II; Faculty of Electrical Engineering and Computing,UniversityofZagreb
• 2007-2008:  Lecturer – General Physics I, II; Faculty of Electrical Engineering and Computing,UniversityofZagreb
• 2008-2009:  Lecturer – General Physics I, II; Faculty of Electrical Engineering and Computing,UniversityofZagreb
• 2009-2010:  Lecturer – General Physics I; Faculty of Electrical Engineering and Computing,UniversityofZagreb
• 2010-2011: Lecturer – General Physics I; Faculty of Electrical Engineering and Computing,UniversityofZagreb
• 2011-2012: Lecturer – General Physics II, Introduction to Nanoscience; Faculty of Electrical Engineering and Computing,UniversityofZagreb

• K. Kuitunen, F. Tuomisto, J. Slotte,  I. Capan: Divacancy clustering in neutron-irradiated and annealed n -type germanium, Physical Review B 78 (2008) 033202.
• B. Pivac, P. Dubcek, I. Capan, I. Zulim, T. Betti, H. Zorc, S. Bernstorff:Nano Si Superlattices for the Next Generation Solar Cells, Journal of Nanoscience and Nanotechnology 9 (2009) 3853.
• I. Capan, B. Pivac, I.D. Hawkins, V.P. Markevich, A.R. Peaker, L. Dobaczewski and R. Jačimović:Neutron-irradiation-induced defects in germanium: A Laplace deep level transient spectroscopy study, Vacuum  84 (2010) 32.
• M. Buljan, J. Grenzer, V.Holý, N. Radic,T. Misic-Radic, S. Levichev, S. Bernstorff, B. Pivac and I. Capan,Structural and charge trapping properties of two bi-layer (Ge+SiO2)/SiO2 films deposited on rippled substrate, Applied Physics Letters 97 (2010) 163117.
• Robert Slunjski, Ivana Capan, Branko Pivac, Alessia Le Donne, Simona Binetti,Effects of low-temperature annealing on polycrystalline silicon for solar cells, Solar Energy Materials and Solar Cells, 95 (2011) 559.
• I. Capan, B.Pivac, and R. Slunjski,Electrical characterisation of Si-SiO2 structures, physica status solidi (c) 8 (2011) 816.  
• Željko Pastuović, Ettore Vittone, Ivana Capan, Milko Jakšić,Probability of divacancy trap production in silicon diodesexposed to focused ion beam irradiation,Applied Physics Letters 98 (2011) 092101.

Books and book chapters

Book chapters

• Pivac, B., Kovačević, I. & Borjanović, V. (2001) Point defects in carbon rich poly-Si. U: Bonnaud, O., Mohammed-Brahim, T., Strunk, H. & Werner, J. (ur.) Polycrystalline Semiconductors IV - Bulk Materials, Thin Films, and Devices. Uettikon am See, Scitech Publications, str. 115-120.

Journal articles

Scientific and review papers

• Knežević, T., Hadžipašić, A., Ohshima, T., Makino, T. & Capan, I. (2022) M-center in low-energy electron irradiated 4H-SiC. Applied Physics Letters, 120 (25), 252101, 4 doi:10.1063/5.0095827.

  doiaip.scitation.orgdoi.orgfulir.irb.hr

• Capan, I. (2022) 4H-SiC Schottky barrier diodes as radiation detectors: a review. Electronics (Basel), 11 (4), 532, 12 doi:10.3390/electronics11040532.

  doiwww.mdpi.comfulir.irb.hr

• Panžić, I., Capan, I., Brodar, T., Bafti, A. & Mandić, V. (2021) Structural and electrical characterization of pure and Al-doped ZnO nanorods. Materials, 14 (23), 7454, 12 doi:10.3390/ma14237454.

  doiwww.mdpi.comdx.doi.orgfulir.irb.hr

• Capan, I., Brodar, T., Bernat, R., ...Coutinho, J. & (2021) M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies. Journal of applied physics, 130 (12), 125703, 10 doi:10.1063/5.0064958.

  doiaip.scitation.org

• Bernat, R., Bakrač, L., Radulović, V., Snoj, L., Makino, T., Ohshima, T., Pastuović, Ž. & Capan, I. (2021) 4H-SiC Schottky barrier diodes for efficient thermal neutron detection. Materials, 14 (17), 5105, 10 doi:10.3390/ma14175105.

  doiwww.mdpi.comfulir.irb.hr

• Čižmar, T., Panžić, I., Capan, I. & Gajović, A. (2021) Nanostructured TiO2 photocatalyst modified with Cu for improved imidacloprid degradation. Applied surface science, 569, 151026, 10 doi:10.1016/j.apsusc.2021.151026.

  doi

• Kojić, V., Bohač, M., Bafti, A., Pavić, L., Salamon, K., Čižmar, T., Gracin, D., Juraić, K., Leskovac, M., Capan, I. & Gajović, A. (2021) Formamidinium lead iodide perovskite films with polyvinylpyrrolidone additive for active layer in perovskite solar cells, enhanced stability and electrical conductivity. Materials, 14 (16), 4594, 18 doi:10.3390/ma14164594.

  doiwww.mdpi.comdx.doi.org

• Coutinho, J., Gouveia, J., Makino, T., Ohshima, T., Pastuović, Ž., Bakrač, L., Brodar, T. & Capan, I. (2021) M center in 4H-SiC is a carbon self-interstitial. Physical review. B., 103, 180102, 4 doi:10.1103/PhysRevB.103.L180102.

  doiarxiv.org

• Bernat, R., Capan, I., Bakrač, L., Brodar, T., Makino, T., Ohshima, T., Pastuović, Ž. & Sarbutt, A. (2021) Response of 4H-SiC Detectors to Ionizing Particles. Crystals, 11 (1), 10, 13 doi:10.3390/cryst11010010.

  doiwww.mdpi.comwww.mdpi.comdoi.orgfulir.irb.hr

• Capan, I., Brodar, T., Yamazaki, Y., Oki, Y., Ohshima, T., Chiba, Y., Hijikata, Y., Snoj, L. & Radulović, V. (2020) Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 478, 224-228 doi:10.1016/j.nimb.2020.07.005.

  doi

• Brodar, T., Bakrač, L., Capan, I., Ohshima, T., Snoj, L., Radulović, V. & Pastuović, Ž. (2020) Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation. Crystals, 10 (9), 845, 16 doi:10.3390/cryst10090845.

  doiwww.mdpi.comfulir.irb.hr

• Coutinho, J., Torres, V., Capan, I., Brodar, T., Ereš, Z., Bernat, R., Radulovič, V., Ambrožič, K., Snoj, L., Pastuović, Ž., Sarbutt, A., Ohshima, T., Yamazaki, Y. & Makino, T. (2020) Silicon carbide diodes for neutron detection. Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 986, 164793, 55 doi:10.1016/j.nima.2020.164793.

  doi

• Kovačić, M., Perović, K., Papac, J., Tomić, A., Matoh, L., Žener, B., Brodar, T., Capan, I., Surca, A., Kušić, H., Štangar, U. & Lončarić Božić, A. (2020) One-Pot Synthesis of Sulfur-Doped TiO2/Reduced Graphene Oxide Composite (S-TiO2/rGO) with Improved Photocatalytic Activity for the Removal of Diclofenac from Water. Materials, 13 (7), 1621, 14 doi:10.3390/ma13071621.

  doiwww.mdpi.comfulir.irb.hr

• Radulović, V., Yamazaki, Y., Pastuović, Ž., Sarbutt, A., Ambrožič, K., Bernat, R., Ereš, Z., Coutinho, J., Ohshima, T., Capan, I. & Snoj, L. (2020) Silicon carbide neutron detector testing at the JSI TRIGA reactor for enhanced border and port security. Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 972, 164122, 8 doi:10.1016/j.nima.2020.164122.

  doiwww.sciencedirect.comfulir.irb.hr

• Capan, I., Yamazaki, Y., Oki, Y., Brodar, T., Makino, T. & Ohshima, T. (2019) Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes. Crystals, 9 (7), 328, 7 doi:10.3390/cryst9070328.

  doiwww.mdpi.comfulir.irb.hr

• Capan, I., Brodar, T., Coutinhi, J., Ohshima, T., Markevich, V. & Peaker, A. (2018) Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling. Journal of applied physics, 124 (24), 245701, 10 doi:10.1063/1.5063773.

  doi

• Brodar, T., Capan, I., Radulovic, V., Snoj, L., Pastuović, Ž., Coutinho, J. & Ohshima, T. (2018) Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 437 (1), 27-31 doi:10.1016/j.nimb.2018.10.030.

  doi

• Mozetič, M., Vesel, A., Primc, G., Eisenmenger-Sittner, C., Bauer, J., Eder, A., Schmid, G., Ruzic, D., Ahmed, Z., Barker, D., Douglass, K., Eckel, S., Fedchak, J., Hendricks, J., Klimov, N., Ricker, J., Scherschligt, J., Stone, J., Strouse, G., Capan, I., Buljan, M., Milošević, S., Teichert, C., Cohen, S., Silva, A., Lehocky, M., Humpoliček, P., Rodriguez, C., Hernandez-Montelongo, J., Mercier, D., Manso-Silván, M., Ceccone, G., Galtayries, A., Stana-Kleinschek, K., Petrov, I., Greene, J., Avila, J., Chen, C., Caja-Munoz, B., Yi, H., Boury, A., Lorcy, S., Asensio, M., Bredin, J., Gans, T., O'Connell, D., Brendin, J., Reniers, F., Vincze, A., Anderle, M. & Montelius, L. (2018) Recent developments in surface science and engineering, thin films, nanoscience, biomaterials, plasma science, and vacuum technology. Thin solid films, 660, 120-160 doi:10.1016/j.tsf.2018.05.046.

  doi

• Capan, I., Brodar, T., Pastuović, ž., Ohshima, T., Snoj, L., Radulović, V., Coutinho, J. & Demouche, K. (2018) Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study. Journal of applied physics, 123 (16), 161597, 37 doi:10.1063/1.5011124.

  doi

• Krstulović, N., Salamon, K., Budimlija, O., Kovač, J., Dasović, J., Umek, P. & Capan, I. (2018) Parameters optimization for synthesis of Al- doped ZnO nanoparticles by laser ablation in water. Applied surface science, 440, 916-925 doi:10.1016/j.apsusc.2018.01.295.

  doi

• Pastuović, Ž., Siegele, R., Capan, I., Brodar, T., Sato, S. & Ohshima, T. (2017) Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime. Journal of physics. Condensed matter, 29 (47), 475701, 6 doi:10.1088/1361-648X/aa908c.

  doi

• Krstulović, N., Umek, P., Salamon, K. & Capan, I. (2017) Synthesis of Al-doped ZnO nanoparticles by laser ablation of ZnO:Al2O3 target in water. Materials Research Express, 4, 105003, 5 doi:10.1088/2053-1591/aa896d.

  doi

• Capan, I., Carvalho, A. & Coutinho, J. (2016) An Outlook on Silicon Nanocrystals for Optoelectronics. Journal of Green Engineering, 5 (3-4), 49-70 doi:10.13052/jge1904-4720.5344.

  doiwww.riverpublishers.com

• Capan, I., Pastuović, Ž., Siegele, R. & Jaćimović, R. (2016) Vacancy-related defects in n-type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 372, 156-160 doi:10.1016/j.nimb.2015.12.039.

  doi

• Pastuović, Ž., Capan, I., David D. Cohen, Jacopo, F., Naoya, I., Takeshi, O., Rainer, S., Norihiro, H. & Tsuchida, H. (2015) Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 348, 233-239 doi:10.1016/j.nimb.2014.12.064.

  doi

• Capan, I., Carvalho, A. & Coutinho, J. (2014) Silicon and germanium nanocrystals: properties and characterization. Beilstein journal of nanotechnology, 5, 1787-1794 doi:10.3762/bjnano.5.189.

  doi

• Pastuović, Ž., Capan, I., ... & Vittone, E. (2014) Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 332, 298-302 doi:10.1016/j.nimb.2014.02.082.

  doi

• Martín-Sánchez, J., Capan, I., ... & Gomes, M. (2013) Shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition: Morphological, structural and charge trapping properties. Applied surface science, 280, 632-640 doi:10.1016/j.apsusc.2013.04.170.

  doi

• Pivac, B., Dubček, P., Capan, I., Zorc, H., Dasović, J., Bernstorff, S., Wu, M. & Vlahovic, B. (2013) GISAXS study of Si nanostructures in SiO2 matrix for solar cell applications. Physica status solidi. A, Applications and materials science, 210 (4), 755-759 doi:10.1002/pssa.201200527.

  doi

• Vieira, E., ..., Buljan, M., Capan, I., ... & Gomes, M. (2012) Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe/SiO2 superlattice. Journal of applied physics, 111 (10), 104323-1 doi:10.1063/1.4722278.

  doi

• Capan, I., Janicki, V., Jaćimović, R. & Pivac, B. (2012) C–V and DLTS studies of radiation induced Si–SiO2 interface defects. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 282 (1), 59-62 doi:10.1016/j.nimb.2011.08.065.

  doi

• Martin-Sanchez, J., Chahboun, A., Gomes, M., Rolo, A., Pivac, B. & Capan, I. (2012) Carrier storage in Ge nanoparticles produced by pulsed laser deposition. Physica status solidi-rapid research letters, 6 (5), 223-225 doi:10.1002/pssr.201206104.

  doi

• Capan, I., Bak-Misiuk, J., Pivac, B., Dubček, P., Misiuk, A., Bernstorff, S. & Romanowski, P. (2011) Defects in silicon introduced by helium implantation and subsequent annealing. Radiation physics and chemistry, 80 (10), 1099-1103 doi:10.1016/j.radphyschem.2011.02.006.

  doi

• Pastuović, Ž., Vittone, E., Capan, I., Jakšić, M. & (2011) Probability of divacancy trap production in silicon diodes exposed to focused ion beam irradiation. Applied physics letters, 98 (9), 092101, 3 doi:10.1063/1.3559000.

  doi

• Capan, I., Pivac, B. & Slunjski, R. (2011) Electrical characterisation of Si-SiO2 structures. Physica status solidi. C, Current topics in solid state physics, 8 (3), 816-818 doi:10.1002/pssc.201000076.

  doi

• Slunjski, R., Capan, I., Pivac, B., Le Donne, A., Binetti, S. & (2011) Effects of low-temperature annealing on polycrystalline silicon for solar cells. Solar energy materials and solar cells, 95 (2), 559-563 doi:10.1016/j.solmat.2010.09.016.

  doi

• Buljan, M., Grenzer, J., Holý, V., Radić, N., Mišić-Radić, T., Levichev, S., Bernstorff, S., Pivac, B. & Capan, I. (2010) Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate. Applied physics letters, 97 (16), 63117-63119 doi:10.1063/1.3504249.

  doi

• Novoselnik, B., Pilipovic, M., Jaćimović, R., Pivac, B., Slunjski, R. & Capan, I. (2010) Capacitance changes in neutron irradiated n-type silicon: The flux effect. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 268 (15), 2400-2402 doi:10.1016/j.nimb.2010.04.017.

  doi

• Slotte, J., Kuitunen, K., Kilpeläinen, S., Tuomisto, F. & Capan, I. (2010) Divacancies at room temperature in germanium. Thin solid films, 518 (9), 2314-2316 doi:10.1016/j.tsf.2009.09.183.

  doi

• Capan, I., Pivac, B., Hawkins, I., Markevich, V., Peaker, A., Dobaczewski, L. & Jačimović, R. (2009) Neutron-irradiation-induced defects in germanium: A Laplace deep level transient spectroscopy study. Vacuum, 84 (1), 32-36 doi:10.1016/j.vacuum.2009.04.003.

  doi

• Pivac, B., Dubček, P., Capan, I., Zulim, I., Betti, T., Zorc, H. & Bernstorff, S. (2009) Nano Si Superlattices for the Next Generation Solar Cells. Journal of Nanoscience and Nanotechnology, 9 (6), 3853-3857 doi:10.1166/jnn.2009.NS79.

  doi

• Wieteska, K., Misiuk, A., Wierzchowski, W., Bak-Misiuk, J., Romanowski, P., Surma, B., Capan, I., Yang, D., Shalimov, A., Graeff, W. & Prujszczyk, M. (2008) Revealing the Defects Introduced in N- or Ge-doped Cz-Si by gamma Irradiation and High Temperature-High Pressure Treatment. Acta Physica Polonica. A, 114 (2), 439-446 doi:10.12693/APhysPolA.114.439.

  doi

• Kuitunen, K., Tuomisto, F., Slotte, J. & Capan, I. (2008) Divacancy clustering in neutron-irradiated and annealed n-type germanium. Physical review. B, Condensed matter and materials physics, 78 (3), 033202, 4 doi:10.1103/PhysRevB.78.033202.

  doi

• Pivac, B., Dubček, P., Capan, I., Zorc, H., Bernstorff, S., Duguay, S., Slaoui, A. & (2008) Structural analysis of annealed amorphous SiO/SiO2 superlattice. Thin Solid Films, 516 (20), 6796-6799 doi:10.1016/j.tsf.2007.12.005.

  doi

• Dubček, P., Pivac, B., Capan, I., Bernstorff, S., Mu, R. & Vlahovic, B. (2008) Evolution of Nanoparticles in Gold-Implanted Glass. Vacuum, 82 (2), 130-133 doi:10.1016/j.vacuum.2007.07.041.

  doi

• Peaker, A., Markevich, V., Slotte, J., Kuituinen, K., Tuomisto, F., Satta, A., Simoen E., Capan, I., Pivac, B. & Jačimović, R. (2008) Vacancy Clusters in Germanium. Solid state phenomena, 131-133, 125--130130 doi:10.4028/www.scientific.net/SSP.131-133.125.

  doi

• Pivac, B., Dubček, P., Capan, I., Radić, N. & Bernstorff, S. (2008) GISAXS study of Si nanoclusters in SiO/SiO2 layers. Vacuum, 82 (2), 189-192 doi:10.1016/j.vacuum.2007.07.024.

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• Markevich, V., Peaker, A., Capan, I., Lastovskii, S., Dobaczewski, L., Emtsev, V. & Abrosimov, N. (2007) Electrically active defects induced by irradiations with electrons, neutrons and ions in Ge-rich SiGe alloys. Physica. B, Condensed matter, 401-402, 184-187 doi:10.1016/j.physb.2007.08.142.

  doi

• Misiuk, A., Surma, B., Bak-Misiuk, J., Londos, C., Vagovič, P., Kovačević, I., Pivac, B., Jung, W. & Prujszcyk, M. (2007) Revealing the radiation-induced effects in silicon by processing at enhanced temperatures– pressures. Radiation measurements, 42 (4-5), 688-692 doi:10.1016/j.radmeas.2007.01.085.

  doi

• Capan, I., Borjanović, V. & Pivac, B. (2007) Dislocation-related deep levels in carbon rich p- type polycrystalline silicon. Solar energy materials and solar cells, 91 (10), 931-937 doi:10.1016/j.solmat.2007.02.011.

  doi

• Kovačević, I., Pivac, B., Jačimović, R., Khan, M., Markevich, V. & Peaker, A. (2006) Defects induced by irradiation with fast neutrons in n-type germanium. Materials science in semiconductor processing, 9 (4-5), 606-612 doi:10.1016/j.mssp.2006.08.033.

  doi

• Bernstorff, S., Dubček, P., Pivac, B., Kovačević, I., Sassella, A., Borghesi, A. & (2006) XRR and GISAXS study of silicon oxynitride films. Applied surface science, 253 (1), 33-37 doi:10.1016/j.apsusc.2006.05.068.

  doi

• Radić, N., Pivac, B., Dubček, P., Kovačević, I., Bernstorff, S. & (2006) Growth of Ge islands on Si substrates. Thin solid films, 515 (2), 752-755 doi:10.1016/j.tsf.2005.12.198.

  doi

• Pivac, B., Kovačević, I., Dubček, P., Radić, N. & Bernstorff, S. (2006) GISAXS study of Si nanocrystals formation in SiO2 thin films. Thin solid films, 515 (2), 756-758 doi:10.1016/j.tsf.2005.12.192.

  doi

• Pivac, B., Dubček, P., Kovačević, I., Bernstorff, S., Mu, R., Wu, M., Ueda, A. & Vlahović, B. (2006) GISAXS study of gold implanted fused silica. Scripta materialia, 55 (2), 135-138 doi:10.1016/j.scriptamat.2006.03.049.

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• Pivac, B., Kovačević, I., Dubček, P., Radić, N., Bernstorff, S. & Slaoui, A. (2006) Self-organized growth of Ge islands on Si (100) substrates. Thin solid films, 511-512, 153-156 doi:10.1016/j.tsf.2005.12.089.

  doi

• Kovačević, I., Pivac, B., Dubček, P., Radić, N., Bernstorff, S. & Slaoui, A. (2006) A GISAXS study of SiO/SiO2 superlattice. Thin solid films, 511-512, 463-467 doi:10.1016/j.tsf.2005.12.028.

  doi

• Kovačević, I. & Pivac, B. (2005) Defects production in gamma irradiated silicon at different temperatures. Vacuum, 80 (1-3), 223-228 doi:10.1016/j.vacuum.2005.08.002.

  doi

• Kovačević, I., Dubček, P., Zorc, H., Radić, N., Pivac, B. & Bernstorff, S. (2005) GISAXS characterization of Ge islands on Si (100) substrates. Vacuum, 80 (1-3), 69-73 doi:10.1016/j.vacuum.2005.07.027.

  doi

• Kovačević, I., Markevich, V., Hawkins, I., Pivac, B. & Peaker, A. (2005) Vacancy-related complexes in neutron-irradiated silicon. Journal of physics. Condensed matter, 17, S2229-S2235 doi:10.1088/0953-8984/17/22/010.

  doi

• Kovačević-Vojtušek, I., Sabljar-Matovinović, M., Planinić, G., Vučković-Rebrina, S., Kardum-Skelin, I., Knotek, M. & Škegro, D. (2004) Unusual presentation of herpes zoster in an immunocompromised patient: case report. Acta dermatovenerologica Croatica, 12 (3), 166-168.

• Kovačević, I., Borjanović, V. & Pivac, B. (2003) Interstitial defects in ion-implanted Si. Vacuum, 71, 129-133 doi:10.1016/S0042-207X(02)00726-1.

  doi

• Pivac, B., Pavlović, M., Kovačević, I., Etlinger, B. & Zulim, I. (2003) UV light induced defects in amorphous silicon thin films. Vacuum, 71, 135-139.

• Hertz, M., Profozić, V., Arora, V., Smirčić-Duvnjak, L., Kovačević, I., Boras, J., Campaigne Barbara N & Metelko, Ž. (2002) Effects of a a fixed mixture of 25% insulin lispro and 75% NPL on plasma glucose during and after moderate physical exercise in patients with type 2 diabetes. Current medical research and opinion, 18 (4), 188-193 doi:10.1185/030079902125000615.

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• Borjanović, V., Kovačević, I., Zorc, H. & Pivac, B. (2002) Irradiation effects on polycrystalline silicon. Solar Energy Materials and Solar Cells, 72 (1-4), 183-189 doi:10.1016/S0927-0248(01)00163-5.

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• Pivac, B., Borjanović, V., Kovačević, I., Evtody, B. & Katz, E. (2002) Comparative studies of EFG ribbon poly-Si grown by different procedures. Solar energy materials and solar cells, 72 (1-4), 165-171 doi:10.1016/S0927-0248(01)00161-1.

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• Pivac, B., Kovačević, I. & Zulim, I. (2002) Defects introduced in amorphous silicon thin films by light soaking. Thin solid films, 403-404, 513-516 doi:10.1016/S0040-6090(01)01649-2.

  doi

• Pivac, B., Kovačević, I. & Borjanović, V. (2002) Defects in carbon and oxygen implanted p-type silicon. Nuclear Instruments & Methods in Physics Research B, 186, 355-359 doi:10.1016/S0168-583X(01)00917-X.

  doi

• Pivac, B., Borjanović, V. & Kovačević, I. (2000) Intrinsic point defects in polycrystalline silicon. Fizika A, 9 (1), 37-46.

  fizika.hfd.hr

• Borjanović, V., Kovačević, I., Šantić, B. & Pivac, B. (2000) Oxygen-related deep levels in oxygen doped EFG poly-Si. Materials science and engineering B : solid state materials for advanced technology, 71 (SI), 292-296 doi:10.1016/S0921-5107(99)00393-1.

  doi

• Kovačević, I., Profazić, V., Škrabalo, Z., Zjačić-Rotkvić, V., Čabrijan, T., Goldoni, V., Jović-Paškvalin, L., Crnčević-Orlić, Ž., Koselj, M. & Metelko, Ž. (1997) Multicentric clinical trial to asses efficacy and tolerability of acarbose (bay G 5421) in comparison to glibenclamide and placebo. Diabetologia Croatica, 26 (2), 83-89.

Conference proceedings papers

Scientific conference proceedings papers

• Radulović, V., Ambrožič, K., Snoj, L., Capan, I., Brodar, T., Ereš, Z., Pastuović, Ž., Sarbutt, A., Ohshima, T., Yamazaki, Y. & Coutinho, J. (2020) E-SiCure Collaboration Project: Silicon Carbide Material Studies and Detector Prototype Testing at the JSI TRIGA Reactor. U: Lyoussi, A., Giot, M., Carette, M., Jenčič, I., Reynard-Carette, C., Vermeeren, L., Snoj, L. & Le Dû, P. (ur.)ANIMMA 2019 – Advancements in Nuclear Instrumentation Measurement Methods and their Applications doi:10.1051/epjconf/202022507007.

  doiwww.epj-conferences.org

• Capan, I., Brodar, T., Ohshima, T., Sato, S., Makino, T., Pastuovic, Ž., Siegele, R., Snoj, L., Radulović, V., Coutinho, J., Torres, V. & Demmouche, K. (2018) Deep Level Defects in 4H-SiC Epitaxial Layers. U: ICSCRM 2017 - The 2017 International Conference on Silicon Carbide and Related Materials doi:10.4028/www.scientific.net/msf.924.225.

  doi

• Knežević, T., Nanver, L., Capan, I. & Suligoj, T. (2018) Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures. U: Biljanovic, P. (ur.)Proceedings of the 41st International Convention MIPRO 2018 doi:10.23919/mipro.2018.8399822.

  doi

• Capan, I., Buljan, M., Mišićc-Radic, T., Pivac, B., Radić, N., Grenzer, J., Holy, V., Levichev, S. & Bernstorff, S. (2010) Electrical Characterization of Ge Nanocrystals in Oxide Matrix. U: MRS Online Proceedings Library doi:10.1557/opl.2011.298.

  doi

• Capan, I., Pivac, B., Duguay, S., Slaoui, A., Dubček, P. & Bernstorff, S. (2007) Structural properties of Ge nanocrystals embeded in SiO2. U: Biljanović, P. & Skala, K. (ur.)Proceedings MIPRO 2007.

• Pivac, B., Kovačević, I., Dubček, P., Radić, N., Bernstorff, S., Vlahović, B. & Zulim, I. (2005) Study of Ge islands on Si (100) substrates. U: Palz, W., Ossenbrink, H. & Helm, P. (ur.)Proceedings of 20th European Photovoltaic Solar Energy Conference.

• Pivac, B., Kovačević, I. & Zulim, I. (2004) Effects of Light Soaking on Amorphous Silicon Thin Films. U: Bal, J., Silvestrini, G., Grassi, A., Palz, W., Vigotti, R., Gamberale, M. & Helm, P. (ur.)Proceedings of 19th European Photovoltaic Solar Energy Conference.

• Pivac, B., Kovačević, I. & Zulim, I. (2004) Effects of Light Soaking on Amorphous Silicon Thin Films. U: J.-L.Bal, G.Silvestrini, A.Grassi, W. Palz, R. Vigotti, M. Gamberale, P. Helm (ur.)19th European Photovoltaic Solar Energy Conference, 7-11 June 2004, Palais des Congres, Paris, France.

• Pivac, B., Kovačević, I., Zulim, I. & Gradišnik, V. (2000) Effects Of Light Soaking On Amorphous Silicon. U: Rohatgi, A. (ur.)Conference Record Of The 28th IEEE Photovoltaic Specialists Conference.

Theses

Master thesis

• Kovačević, I. (2004) 'Temperature dependent defect production in gamma irradiated silicon', magistarski rad, Prirodoslovno-matematički fakultet, Zagreb.