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Bernat, Robert; Knežević, Tihomir; Radulovič, Vladimir; Snoj, Luka; Makino, Takahiro; Ohshima, Takeshi; Capan, Ivana | Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes // Materials, 16 (2023), 6; 2202, 11. doi: 10.3390/ma16062202
doiwww.mdpi.comfulir.irb.hr
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Torres, Vittor ; Capan, Ivana ; Coutinho, Jose | Theory of shallow and deep boron defects in 4H-SiC // Physical review. B, 106 (2022), 22; 224112, 9. doi: 10.1103/PhysRevB.106.224112
doijournals.aps.orgarxiv.org
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Knežević, Tihomir ; Hadžipašić, Amira ; Ohshima, Takeshi ; Makino, Takahiro ; Capan, Ivana | M-center in low-energy electron irradiated 4H-SiC // Applied physics letters, 120 (2022), 25; 252101, 4. doi: 10.1063/5.0095827
doiaip.scitation.orgdoi.orgfulir.irb.hr
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Panžić, Ivana ; Capan, Ivana ; Brodar, Tomislav ; Bafti, Arijeta ; Mandić, Vilko | Structural and electrical characterization of pure and Al-doped ZnO nanorods // Materials, 14 (2021), 23; 7454, 12. doi: 10.3390/ma14237454
doiwww.mdpi.comdx.doi.orgfulir.irb.hr
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Capan, Ivana ; Brodar, Tomislav ; Bernat, Robert ; ...Coutinho, Jose ; | M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies // Journal of applied physics, 130 (2021), 12; 125703, 10. doi: 10.1063/5.0064958
doiaip.scitation.orgaip.scitation.org
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Bernat, Robert ; Bakrač, Luka ; Radulović, Vladimir ; Snoj, Luka ; Makino, Takahiro ; Ohshima, Takeshi ; Pastuović, Željko ; Capan, Ivana | 4H-SiC Schottky barrier diodes for efficient thermal neutron detection // Materials, 14 (2021), 17; 5105, 10. doi: 10.3390/ma14175105
doiwww.mdpi.comfulir.irb.hr
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Čižmar, Tihana ; Panžić, Ivana ; Capan, Ivana ; Gajović, Andreja | Nanostructured TiO2 photocatalyst modified with Cu for improved imidacloprid degradation // Applied surface science, 569 (2021), 151026, 10. doi: 10.1016/j.apsusc.2021.151026
doidx.doi.orgwww.sciencedirect.comfulir.irb.hr
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Kojić, Vedran ; Bohač, Mario ; Bafti, Arijeta ; Pavić, Luka ; Salamon, Krešimir ; Čižmar, Tihana ; Gracin, Davor ; Juraić, Krunoslav ; Leskovac, Mirela ; Capan, Ivana et al. | Formamidinium lead iodide perovskite films with polyvinylpyrrolidone additive for active layer in perovskite solar cells, enhanced stability and electrical conductivity // Materials, 14 (2021), 16; 4594, 18. doi: 10.3390/ma14164594
doiwww.mdpi.comdx.doi.orgfulir.irb.hr
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Bernat, Robert ; Capan, Ivana ; Bakrač, Luka ; Brodar, Tomislav ; Makino, Takahiro ; Ohshima, Takeshi ; Pastuović, Željko ; Sarbutt, Adam | Response of 4H-SiC Detectors to Ionizing Particles // Crystals, 11 (2021), 1; 10, 13. doi: 10.3390/cryst11010010
doiwww.mdpi.comwww.mdpi.comdoi.orgfulir.irb.hr
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Capan, Ivana ; Yamazaki, Yuichi ; Oki, Yuya ; Brodar, Tomislav ; Makino, Takahiro ; Ohshima, Takeshi | Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes // Crystals, 9 (2019), 7; 328, 7. doi: 10.3390/cryst9070328
doiwww.mdpi.comfulir.irb.hr
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Capan, Ivana ; Brodar, Tomislav ; Yamazaki, Yuichi ; Oki, Yuya ; Ohshima, Takeshi ; Chiba, Yoji ; Hijikata, Yasuto ; Snoj, Luka ; Radulović, Vladimir | Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 478 (2020), 224-228. doi: 10.1016/j.nimb.2020.07.005
doiwww.sciencedirect.comdoi.org
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Brodar, Tomislav ; Bakrač, Luka ; Capan, Ivana ; Ohshima, Takeshi ; Snoj, Luka ; Radulović, Vladimir ; Pastuović, Željko | Depth Profile Analysis of Deep Level Defects in 4H- SiC Introduced by Radiation // Crystals, 10 (2020), 9; 845, 16. doi: 10.3390/cryst10090845
doiwww.mdpi.comfulir.irb.hr
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Kovačić, Marin ; Perović, Klara ; Papac, Josipa ; Tomić, Antonija ; Matoh, Lev ; Žener, Boštjan ; Brodar, Tomislav ; Capan, Ivana ; Surca, Angelja K. ; Kušić, Hrvoje et al. | One-pot synthesis of sulfur-doped TiO2/reduced graphene oxide composite (S-TiO2/rGO) with improved photocatalytic activity for the removal of diclofenac from water // Materials, 13 (2020), 7; 1621, 14. doi: 10.3390/ma13071621
doiwww.mdpi.comfulir.irb.hrdx.doi.org
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Radulović, Vladimir ; Yamazaki, Yuichi ; Pastuović, Željko ; Sarbutt, Adam ; Ambrožič, Klemen ; Bernat, Robert ; Ereš, Zoran ; Coutinho, José ; Ohshima, Takeshi ; Capan, Ivana et al. | Silicon carbide neutron detector testing at the JSI TRIGA reactor for enhanced border and port security // Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 972 (2020), 164122, 8. doi: 10.1016/j.nima.2020.164122
doiwww.sciencedirect.comfulir.irb.hr
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Capan, Ivana ; Brodar, Tomislav ; Coutinhi, Jose ; Ohshima, Takeshi ; Markevich, Vladimir ; Peaker, Anthony | Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling // Journal of applied physics, 124 (2018), 24; 245701, 10. doi: 10.1063/1.5063773
doiaip.scitation.org
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Brodar, Tomislav ; Capan, Ivana ; Radulovic, Vladimir ; Snoj, Luka ; Pastuović, Željko ; Coutinho, Jose ; Ohshima, Takeshi | Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 437 (2018), 1; 27-31. doi: 10.1016/j.nimb.2018.10.030
doiwww.sciencedirect.com
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Mozetič, M. ; Vesel, A. ; Primc, G. ; Eisenmenger-Sittner, C. ; Bauer, J. ; Eder, A. ; Schmid, G.H.S. ; Ruzic, D.N. ; Ahmed, Z. ; Barker, D. et al. | Recent developments in surface science and engineering, thin films, nanoscience, biomaterials, plasma science, and vacuum technology // Thin solid films, 660 (2018), 120-160. doi: 10.1016/j.tsf.2018.05.046
doiwww.sciencedirect.com
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Capan, Ivana ; Carvalho, Aleksandra ; Coutinho, Jose | An Outlook on Silicon Nanocrystals for Optoelectronics // Journal of green engineering, 5 (2016), 3-4; 49-70. doi: 10.13052/jge1904-4720.5344
doiwww.riverpublishers.com
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Capan, Ivana ; Brodar, Tomislav ; Pastuović, željko ; Ohshima, Takeshi ; Snoj, Luka ; Radulović, Vladimir ; Coutinho, Jose ; Demouche, Kamel | Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study // Journal of applied physics, 123 (2018), 16; 161597, 37. doi: 10.1063/1.5011124
doiaip.scitation.orgdoi.org
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Krstulović, Nikša ; Salamon, Krešimir ; Budimlija, Ognjen ; Kovač, Janez ; Dasović, Jasna ; Umek, Polona ; Capan, Ivana | Parameters optimization for synthesis of Al- doped ZnO nanoparticles by laser ablation in water // Applied surface science, 440 (2018), 916-925. doi: 10.1016/j.apsusc.2018.01.295
doiwww.sciencedirect.com
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Pastuović, Željko ; Siegele, Rainer ; Capan, Ivana ; Brodar, Tomislav ; Sato, Shin-icihiro ; Ohshima, Takeshi | Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime // Journal of physics. Condensed matter, 29 (2017), 47; 475701, 6. doi: 10.1088/1361-648X/aa908c
doiiopscience.iop.org
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Krstulović, Nikša ; Umek, Polona ; Salamon, Krešimir ; Capan, Ivana | Synthesis of Al-doped ZnO nanoparticles by laser ablation of ZnO:Al2O3 target in water // Materials research express, 4 (2017), 105003, 5. doi: 10.1088/2053-1591/aa896d
doiiopscience.iop.org
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Capan, Ivana ; Pastuović, Željko ; Siegele, Rainer ; Jaćimović, Radojko | Vacancy-related defects in n-type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 372 (2016), 156-160. doi: 10.1016/j.nimb.2015.12.039
doiwww.sciencedirect.com
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Pastuović, Željko ; Capan, Ivana ; David D. Cohen ; Jacopo, Forneris ; Naoya, Iwamoto ; Takeshi, Ohshima ; Rainer, Siegele ; Norihiro, Hoshino ; Tsuchida, Hidekazu | Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 348 (2015), 233-239. doi: 10.1016/j.nimb.2014.12.064
doiwww.sciencedirect.comwww.sciencedirect.com
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Pastuović, Željko ; Capan, Ivana ; ... ; Vittone, Ettore | Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 332 (2014), 298-302. doi: 10.1016/j.nimb.2014.02.082
doiwww.sciencedirect.com
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Martín-Sánchez, J. ; Capan, Ivana ; ... ; Gomes, M.J.M. | Shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition: Morphological, structural and charge trapping properties // Applied surface science, 280 (2013), 632-640. doi: 10.1016/j.apsusc.2013.04.170
doiwww.sciencedirect.comac.els-cdn.comdx.doi.org
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Pivac, Branko ; Dubček, Pavo ; Capan, Ivana ; Zorc, Hrvoje ; Dasović, Jasna ; Bernstorff, Sigrid ; Wu, Marvin ; Vlahovic, Branislav | GISAXS study of Si nanostructures in SiO2 matrix for solar cell applications // Physica status solidi. A, Applications and materials science, 210 (2013), 4; 755-759. doi: 10.1002/pssa.201200527
doionlinelibrary.wiley.com
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Vieira, E.M.F. ; ... ; Buljan, Maja ; Capan, Ivana ; ... ; Gomes, M.J.M. | Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe/SiO2 superlattice // Journal of applied physics, 111 (2012), 10; 104323-1-104323-9. doi: 10.1063/1.4722278
doi
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Capan, Ivana ; Janicki, Vesna ; Jaćimović, Radojko ; Pivac, Branko | C–V and DLTS studies of radiation induced Si–SiO2 interface defects // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 282 (2012), 1; 59-62. doi: 10.1016/j.nimb.2011.08.065
doiwww.sciencedirect.comac.els-cdn.comdx.doi.org
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Martin-Sanchez, J. ; Chahboun, A. ; Gomes, M.J.M. ; Rolo, A.G. ; Pivac, Branko ; Capan, Ivana | Carrier storage in Ge nanoparticles produced by pulsed laser deposition // Physica status solidi. Rapid research letters, 6 (2012), 5; 223-225. doi: 10.1002/pssr.201206104
doionlinelibrary.wiley.com
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Buljan, Maja ; Grenzer, J. ; Holý, V. ; Radić, Nikola ; Mišić-Radić, Tea ; Levichev, S. ; Bernstorff, S. ; Pivac, Branko ; Capan, Ivana | Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate // Applied physics letters, 97 (2010), 16; 63117-63119. doi: 10.1063/1.3504249
doiaip.scitation.orgdoi.org
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Capan, Ivana ; Bak-Misiuk, Jadwiga ; Pivac, Branko ; Dubček, Pavo ; Misiuk, Andrzej ; Bernstorff, Sigrid ; Romanowski, P. | Defects in silicon introduced by helium implantation and subsequent annealing // Radiation physics and chemistry (1993), 80 (2011), 10; 1099-1103. doi: 10.1016/j.radphyschem.2011.02.006
doidx.doi.orgwww.sciencedirect.com
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Pastuović, Željko ; Vittone, Ettore ; Capan, Ivana ; Jakšić, Milko ; | Probability of divacancy trap production in silicon diodes exposed to focused ion beam irradiation // Applied physics letters, 98 (2011), 9; 092101, 3. doi: 10.1063/1.3559000
doidx.doi.orgapl.aip.org
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Capan, Ivana ; Pivac, Branko ; Slunjski, Robert | Electrical characterisation of Si-SiO2 structures // Physica status solidi. C, Current topics in solid state physics, 8 (2011), 3; 816-818. doi: 10.1002/pssc.201000076
doionlinelibrary.wiley.com
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Slunjski, Robert ; Capan, Ivana ; Pivac, Branko ; Le Donne, Alessia ; Binetti, Simona ; | Effects of low-temperature annealing on polycrystalline silicon for solar cells // Solar energy materials and solar cells, 95 (2011), 2; 559-563. doi: 10.1016/j.solmat.2010.09.016
doiwww.sciencedirect.comdoi.org
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Novoselnik, Branimir ; Pilipovic, Marko ; Jaćimović, Radojko ; Pivac, Branko ; Slunjski, Robert ; Capan, Ivana | Capacitance changes in neutron irradiated n-type silicon: The flux effect // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 268 (2010), 15; 2400-2402. doi: 10.1016/j.nimb.2010.04.017
doiwww.sciencedirect.comdoi.org
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Slotte, J. ; Kuitunen, K. ; Kilpeläinen, S. ; Tuomisto, F. ; Capan, Ivana | Divacancies at room temperature in germanium // Thin solid films, 518 (2010), 9; 2314-2316. doi: 10.1016/j.tsf.2009.09.183
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Capan, Ivana ; Pivac, Branko ; Hawkins, I. D. ; Markevich, V. P. ; Peaker, A. R. ; Dobaczewski, L. ; Jačimović, Radojko | Neutron-irradiation-induced defects in germanium: A Laplace deep level transient spectroscopy study // Vacuum, 84 (2009), 1; 32-36. doi: 10.1016/j.vacuum.2009.04.003
doiwww.sciencedirect.comdoi.org
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Pivac, Branko ; Dubček, Pavo ; Capan, Ivana ; Zulim, Ivan ; Betti, Tihomir ; Zorc, Hrvoje ; Bernstorff, Sigrid | Nano Si Superlattices for the Next Generation Solar Cells // Journal of nanoscience and nanotechnology, 9 (2009), 6; 3853-3857. doi: 10.1166/jnn.2009.NS79
doiwww.ingentaconnect.comdoi.org
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Wieteska, K. ; Misiuk, A. ; Wierzchowski, W. ; Bak-Misiuk, J. ; Romanowski, P. ; Surma, B. ; Capan, Ivana ; Yang, D. ; Shalimov, A. ; Graeff, W. et al. | Revealing the Defects Introduced in N- or Ge-doped Cz-Si by gamma Irradiation and High Temperature-High Pressure Treatment // Acta Physica Polonica. A, 114 (2008), 2; 439-446. doi: 10.12693/APhysPolA.114.439
doipsjd.icm.edu.pl
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Kuitunen, K. ; Tuomisto, F. ; Slotte, J. ; Capan, Ivana | Divacancy clustering in neutron-irradiated and annealed n-type germanium // Physical review. B, Condensed matter and materials physics, 78 (2008), 3; 033202, 4. doi: 10.1103/PhysRevB.78.033202
doijournals.aps.org
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Pivac, Branko ; Dubček, Pavo ; Capan, Ivana ; Zorc, Hrvoje ; Bernstorff, S. ; Duguay, S. ; Slaoui, A. ; | Structural analysis of annealed amorphous SiO/SiO2 superlattice // Thin solid films, 516 (2008), 20; 6796-6799. doi: 10.1016/j.tsf.2007.12.005
doiwww.sciencedirect.com
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Markevich, V. P. ; Peaker, A. R. ; Capan, Ivana ; Lastovskii, S. B. ; Dobaczewski, L. ; Emtsev, V. V. ; Abrosimov, N. V. | Electrically active defects induced by irradiations with electrons, neutrons and ions in Ge-rich SiGe alloys // Physica. B, Condensed matter, 401-402 (2007), 184-187. doi: 10.1016/j.physb.2007.08.142
doiwww.sciencedirect.com
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Dubček, Pavo ; Pivac, Branko ; Capan, Ivana ; Bernstorff, S. ; Mu, R. ; Vlahovic, Branislav | Evolution of Nanoparticles in Gold-Implanted Glass // Vacuum, 82 (2008), 2; 130-133. doi: 10.1016/j.vacuum.2007.07.041
doiwww.sciencedirect.comdoi.org
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Peaker, A.R. ; Markevich, V.P. ; Slotte, J. ; Kuituinen, K. ; Tuomisto, F. ; Satta, A. ; Simoen E. ; Capan, Ivana ; Pivac, Branko ; Jačimović, Radojko | Vacancy Clusters in Germanium // Solid state phenomena, 131-133 (2008), 125--130130. doi: 10.4028/www.scientific.net/SSP.131-133.125
doiwww.scientific.netdoi.org
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Pivac, Branko ; Dubček, Pavo ; Capan, Ivana ; Radić, Nikola ; Bernstorff, Sigrid | GISAXS study of Si nanoclusters in SiO/SiO2 layers // Vacuum, 82 (2008), 2; 189-192. doi: 10.1016/j.vacuum.2007.07.024
doiwww.sciencedirect.comdoi.org
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Misiuk, A. ; Surma, B. ; Bak-Misiuk, J. ; Londos, C.A. ; Vagovič, P. ; Kovačević, Ivana ; Pivac, Branko ; Jung, W. ; Prujszcyk, M. | Revealing the radiation-induced effects in silicon by processing at enhanced temperatures– pressures // Radiation measurements, 42 (2007), 4-5; 688-692. doi: 10.1016/j.radmeas.2007.01.085
doiwww.sciencedirect.com
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Capan, Ivana ; Borjanović, Vesna ; Pivac, Branko | Dislocation-related deep levels in carbon rich p- type polycrystalline silicon // Solar energy materials and solar cells, 91 (2007), 10; 931-937. doi: 10.1016/j.solmat.2007.02.011
doiwww.sciencedirect.com
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Kovačević, Ivana ; Pivac, Branko ; Jačimović, R. ; Khan, M.K. ; Markevich, V.P. ; Peaker, A.R. | Defects induced by irradiation with fast neutrons in n-type germanium // Materials science in semiconductor processing, 9 (2006), 4-5; 606-612. doi: 10.1016/j.mssp.2006.08.033
doiwww.sciencedirect.com
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Bernstorff, S. ; Dubček, Pavo ; Pivac, Branko ; Kovačević, Ivana ; Sassella, A. ; Borghesi, A. ; | XRR and GISAXS study of silicon oxynitride films // Applied surface science, 253 (2006), 1; 33-37. doi: 10.1016/j.apsusc.2006.05.068
doiwww.sciencedirect.com
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Radić, Nikola ; Pivac, Branko ; Dubček, Pavo ; Kovačević, Ivana ; Bernstorff, Sigrid ; | Growth of Ge islands on Si substrates // Thin solid films, 515 (2006), 2; 752-755. doi: 10.1016/j.tsf.2005.12.198
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Pivac, Branko ; Kovačević, Ivana ; Dubček, Pavo ; Radić, Nikola ; Bernstorff, Sigrid | GISAXS study of Si nanocrystals formation in SiO2 thin films // Thin solid films, 515 (2006), 2; 756-758. doi: 10.1016/j.tsf.2005.12.192
doiwww.sciencedirect.com
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Pivac, Branko ; Dubček, Pavo ; Kovačević, Ivana ; Bernstorff, S. ; Mu, R. ; Wu, M. ; Ueda, A. ; Vlahović, Branislav | GISAXS study of gold implanted fused silica // Scripta materialia, 55 (2006), 2; 135-138. doi: 10.1016/j.scriptamat.2006.03.049
doiwww.sciencedirect.com
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Pivac, Branko ; Kovačević, Ivana ; Dubček, Pavo ; Radić, Nikola ; Bernstorff, S. ; Slaoui, A. | Self-organized growth of Ge islands on Si (100) substrates // Thin solid films, 511-512 (2006), 153-156. doi: 10.1016/j.tsf.2005.12.089
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Kovačević, Ivana ; Pivac, Branko ; Dubček, Pavo ; Radić, Nikola ; Bernstorff, S. ; Slaoui, A. | A GISAXS study of SiO/SiO2 superlattice // Thin solid films, 511-512 (2006), 463-467. doi: 10.1016/j.tsf.2005.12.028
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Kovačević, Ivana ; Pivac, Branko | Defects production in gamma irradiated silicon at different temperatures // Vacuum, 80 (2005), 1-3; 223-228. doi: 10.1016/j.vacuum.2005.08.002
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Kovačević, Ivana ; Dubček, Pavo ; Zorc, Hrvoje ; Radić, Nikola ; Pivac, Branko ; Bernstorff, Sigrid | GISAXS characterization of Ge islands on Si (100) substrates // Vacuum, 80 (2005), 1-3; 69-73. doi: 10.1016/j.vacuum.2005.07.027
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Kovačević, Ivana ; Markevich, V.P. ; Hawkins, I.D. ; Pivac, Branko ; Peaker, A.R. | Vacancy-related complexes in neutron-irradiated silicon // Journal of physics. Condensed matter, 17 (2005), S2229-S2235. doi: 10.1088/0953-8984/17/22/010
doiiopscience.iop.org
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Kovačević, Ivana ; Borjanović, Vesna ; Pivac, Branko | Interstitial defects in ion-implanted Si // Vacuum, 71 (2003), 129-133. doi: 10.1016/S0042-207X(02)00726-1
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Hertz, Matthias ; Profozić, Velimir ; Arora, Vinik ; Smirčić-Duvnjak, Lea ; Kovačević, Ivana ; Boras, Jozo ; Campaigne Barbara N ; Metelko, Željko | Effects of a a fixed mixture of 25% insulin lispro and 75% NPL on plasma glucose during and after moderate physical exercise in patients with type 2 diabetes // Current Medical Research and Opinions, 18 (2002), 4; 188-193. doi: 10.1185/030079902125000615
doiwww.tandfonline.com
Pivac, Branko ; Pavlović, Mladen ; Kovačević, Ivana ; Etlinger, Božidar ; Zulim, Ivan | UV light induced defects in amorphous silicon thin films // Vacuum, 71 (2003), 135-139-x
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Borjanović, Vesna ; Kovačević, Ivana ; Zorc, Hrvoje ; Pivac, Branko | Irradiation effects on polycrystalline silicon // Solar energy materials and solar cells, 72 (2002), 1-4; 183-189. doi: 10.1016/S0927-0248(01)00163-5
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Pivac, Branko ; Borjanović, Vesna ; Kovačević, Ivana ; Evtody, B.N. ; Katz, E. | Comparative studies of EFG ribbon poly-Si grown by different procedures // Solar energy materials and solar cells, 72 (2002), 1-4; 165-171. doi: 10.1016/S0927-0248(01)00161-1
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Pivac, Branko ; Kovačević, Ivana ; Zulim, Ivan | Defects introduced in amorphous silicon thin films by light soaking // Thin solid films, 403-404 (2002), 513-516. doi: 10.1016/S0040-6090(01)01649-2
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Pivac, Branko ; Kovačević, Ivana ; Borjanović, Vesna | Defects in carbon and oxygen implanted p-type silicon // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 186 (2002), 355-359. doi: 10.1016/S0168-583X(01)00917-X
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Pivac, Branko ; Borjanović, Vesna ; Kovačević, Ivana | Intrinsic point defects in polycrystalline silicon // Fizika A, 9 (2000), 1; 37-46
fizika.hfd.hr
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Borjanović, Vesna ; Kovačević, Ivana ; Šantić, Branko ; Pivac, Branko | Oxygen-related deep levels in oxygen doped EFG poly-Si // Materials science & engineering. B, Solid-state materials for advanced technology, 71 (2000), SI; 292-296. doi: 10.1016/S0921-5107(99)00393-1
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Kovačević, Ivana ; Profazić, Velimir ; Škrabalo, Zdenko ; Zjačić-Rotkvić, Vanja ; Čabrijan, Tomislav ; Goldoni, Vesna ; Jović-Paškvalin, Ljerka ; Crnčević-Orlić, Željka ; Koselj, Miha ; Metelko, Željko | Multicentric clinical trial to asses efficacy and tolerability of acarbose (bay G 5421) in comparison to glibenclamide and placebo // Diabetologia Croatica, 26 (1997), 2; 83-89
