e-SiCure

e-SiCure 2

Knjige i poglavlja u knjigama

Poglavlja u knjigama

• Pivac, B., Kovačević, I. & Borjanović, V. (2001) Point defects in carbon rich poly-Si. U: Bonnaud, O., Mohammed-Brahim, T., Strunk, H. & Werner, J. (ur.) Polycrystalline Semiconductors IV - Bulk Materials, Thin Films, and Devices. Uetikon, Scitech Publications, str. 115-120.

Radovi u časopisima

Znanstveni i pregledni radovi

• Torres, V., Capan, I. & Coutinho, J. (2022) Theory of shallow and deep boron defects in 4H-SiC. Physical review. B, 106 (22), 224112, 9 doi:10.1103/PhysRevB.106.224112.

  doiarxiv.org

• Knežević, T., Hadžipašić, A., Ohshima, T., Makino, T. & Capan, I. (2022) M-center in low-energy electron irradiated 4H-SiC. Applied Physics Letters, 120 (25), 252101, 4 doi:10.1063/5.0095827.

  doiaip.scitation.orgdoi.orgfulir.irb.hr

• Capan, I. (2022) 4H-SiC Schottky barrier diodes as radiation detectors: a review. Electronics (Basel), 11 (4), 532, 12 doi:10.3390/electronics11040532.

  doiwww.mdpi.comfulir.irb.hr

• Panžić, I., Capan, I., Brodar, T., Bafti, A. & Mandić, V. (2021) Structural and electrical characterization of pure and Al-doped ZnO nanorods. Materials, 14 (23), 7454, 12 doi:10.3390/ma14237454.

  doiwww.mdpi.comdx.doi.orgfulir.irb.hr

• Capan, I., Brodar, T., Bernat, R., ...Coutinho, J. & (2021) M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies. Journal of applied physics, 130 (12), 125703, 10 doi:10.1063/5.0064958.

  doiaip.scitation.org

• Bernat, R., Bakrač, L., Radulović, V., Snoj, L., Makino, T., Ohshima, T., Pastuović, Ž. & Capan, I. (2021) 4H-SiC Schottky barrier diodes for efficient thermal neutron detection. Materials, 14 (17), 5105, 10 doi:10.3390/ma14175105.

  doiwww.mdpi.comfulir.irb.hr

• Čižmar, T., Panžić, I., Capan, I. & Gajović, A. (2021) Nanostructured TiO2 photocatalyst modified with Cu for improved imidacloprid degradation. Applied surface science, 569, 151026, 10 doi:10.1016/j.apsusc.2021.151026.

  doi

• Kojić, V., Bohač, M., Bafti, A., Pavić, L., Salamon, K., Čižmar, T., Gracin, D., Juraić, K., Leskovac, M., Capan, I. & Gajović, A. (2021) Formamidinium lead iodide perovskite films with polyvinylpyrrolidone additive for active layer in perovskite solar cells, enhanced stability and electrical conductivity. Materials, 14 (16), 4594, 18 doi:10.3390/ma14164594.

  doiwww.mdpi.comdx.doi.org

• Coutinho, J., Gouveia, J., Makino, T., Ohshima, T., Pastuović, Ž., Bakrač, L., Brodar, T. & Capan, I. (2021) M center in 4H-SiC is a carbon self-interstitial. Physical review. B., 103, 180102, 4 doi:10.1103/PhysRevB.103.L180102.

  doiarxiv.org

• Bernat, R., Capan, I., Bakrač, L., Brodar, T., Makino, T., Ohshima, T., Pastuović, Ž. & Sarbutt, A. (2021) Response of 4H-SiC Detectors to Ionizing Particles. Crystals, 11 (1), 10, 13 doi:10.3390/cryst11010010.

  doiwww.mdpi.comwww.mdpi.comdoi.orgfulir.irb.hr

• Capan, I., Brodar, T., Yamazaki, Y., Oki, Y., Ohshima, T., Chiba, Y., Hijikata, Y., Snoj, L. & Radulović, V. (2020) Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 478, 224-228 doi:10.1016/j.nimb.2020.07.005.

  doi

• Brodar, T., Bakrač, L., Capan, I., Ohshima, T., Snoj, L., Radulović, V. & Pastuović, Ž. (2020) Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation. Crystals, 10 (9), 845, 16 doi:10.3390/cryst10090845.

  doiwww.mdpi.comfulir.irb.hr

• Coutinho, J., Torres, V., Capan, I., Brodar, T., Ereš, Z., Bernat, R., Radulovič, V., Ambrožič, K., Snoj, L., Pastuović, Ž., Sarbutt, A., Ohshima, T., Yamazaki, Y. & Makino, T. (2020) Silicon carbide diodes for neutron detection. Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 986, 164793, 55 doi:10.1016/j.nima.2020.164793.

  doi

• Kovačić, M., Perović, K., Papac, J., Tomić, A., Matoh, L., Žener, B., Brodar, T., Capan, I., Surca, A., Kušić, H., Štangar, U. & Lončarić Božić, A. (2020) One-Pot Synthesis of Sulfur-Doped TiO2/Reduced Graphene Oxide Composite (S-TiO2/rGO) with Improved Photocatalytic Activity for the Removal of Diclofenac from Water. Materials, 13 (7), 1621, 14 doi:10.3390/ma13071621.

  doiwww.mdpi.comfulir.irb.hr

• Radulović, V., Yamazaki, Y., Pastuović, Ž., Sarbutt, A., Ambrožič, K., Bernat, R., Ereš, Z., Coutinho, J., Ohshima, T., Capan, I. & Snoj, L. (2020) Silicon carbide neutron detector testing at the JSI TRIGA reactor for enhanced border and port security. Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 972, 164122, 8 doi:10.1016/j.nima.2020.164122.

  doiwww.sciencedirect.comfulir.irb.hr

• Capan, I., Yamazaki, Y., Oki, Y., Brodar, T., Makino, T. & Ohshima, T. (2019) Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes. Crystals, 9 (7), 328, 7 doi:10.3390/cryst9070328.

  doiwww.mdpi.comfulir.irb.hr

• Capan, I., Brodar, T., Coutinhi, J., Ohshima, T., Markevich, V. & Peaker, A. (2018) Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling. Journal of applied physics, 124 (24), 245701, 10 doi:10.1063/1.5063773.

  doi

• Brodar, T., Capan, I., Radulovic, V., Snoj, L., Pastuović, Ž., Coutinho, J. & Ohshima, T. (2018) Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 437 (1), 27-31 doi:10.1016/j.nimb.2018.10.030.

  doi

• Mozetič, M., Vesel, A., Primc, G., Eisenmenger-Sittner, C., Bauer, J., Eder, A., Schmid, G., Ruzic, D., Ahmed, Z., Barker, D., Douglass, K., Eckel, S., Fedchak, J., Hendricks, J., Klimov, N., Ricker, J., Scherschligt, J., Stone, J., Strouse, G., Capan, I., Buljan, M., Milošević, S., Teichert, C., Cohen, S., Silva, A., Lehocky, M., Humpoliček, P., Rodriguez, C., Hernandez-Montelongo, J., Mercier, D., Manso-Silván, M., Ceccone, G., Galtayries, A., Stana-Kleinschek, K., Petrov, I., Greene, J., Avila, J., Chen, C., Caja-Munoz, B., Yi, H., Boury, A., Lorcy, S., Asensio, M., Bredin, J., Gans, T., O'Connell, D., Brendin, J., Reniers, F., Vincze, A., Anderle, M. & Montelius, L. (2018) Recent developments in surface science and engineering, thin films, nanoscience, biomaterials, plasma science, and vacuum technology. Thin solid films, 660, 120-160 doi:10.1016/j.tsf.2018.05.046.

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• Capan, I., Brodar, T., Pastuović, ž., Ohshima, T., Snoj, L., Radulović, V., Coutinho, J. & Demouche, K. (2018) Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study. Journal of applied physics, 123 (16), 161597, 37 doi:10.1063/1.5011124.

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• Krstulović, N., Salamon, K., Budimlija, O., Kovač, J., Dasović, J., Umek, P. & Capan, I. (2018) Parameters optimization for synthesis of Al- doped ZnO nanoparticles by laser ablation in water. Applied surface science, 440, 916-925 doi:10.1016/j.apsusc.2018.01.295.

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• Pastuović, Ž., Siegele, R., Capan, I., Brodar, T., Sato, S. & Ohshima, T. (2017) Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime. Journal of physics. Condensed matter, 29 (47), 475701, 6 doi:10.1088/1361-648X/aa908c.

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• Krstulović, N., Umek, P., Salamon, K. & Capan, I. (2017) Synthesis of Al-doped ZnO nanoparticles by laser ablation of ZnO:Al2O3 target in water. Materials Research Express, 4, 105003, 5 doi:10.1088/2053-1591/aa896d.

  doi

• Capan, I., Carvalho, A. & Coutinho, J. (2016) An Outlook on Silicon Nanocrystals for Optoelectronics. Journal of Green Engineering, 5 (3-4), 49-70 doi:10.13052/jge1904-4720.5344.

  doiwww.riverpublishers.com

• Capan, I., Pastuović, Ž., Siegele, R. & Jaćimović, R. (2016) Vacancy-related defects in n-type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 372, 156-160 doi:10.1016/j.nimb.2015.12.039.

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• Pastuović, Ž., Capan, I., David D. Cohen, Jacopo, F., Naoya, I., Takeshi, O., Rainer, S., Norihiro, H. & Tsuchida, H. (2015) Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 348, 233-239 doi:10.1016/j.nimb.2014.12.064.

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• Capan, I., Carvalho, A. & Coutinho, J. (2014) Silicon and germanium nanocrystals: properties and characterization. Beilstein journal of nanotechnology, 5, 1787-1794 doi:10.3762/bjnano.5.189.

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• Pastuović, Ž., Capan, I., ... & Vittone, E. (2014) Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 332, 298-302 doi:10.1016/j.nimb.2014.02.082.

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• Martín-Sánchez, J., Capan, I., ... & Gomes, M. (2013) Shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition: Morphological, structural and charge trapping properties. Applied surface science, 280, 632-640 doi:10.1016/j.apsusc.2013.04.170.

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• Pivac, B., Dubček, P., Capan, I., Zorc, H., Dasović, J., Bernstorff, S., Wu, M. & Vlahovic, B. (2013) GISAXS study of Si nanostructures in SiO2 matrix for solar cell applications. Physica status solidi. A, Applications and materials science, 210 (4), 755-759 doi:10.1002/pssa.201200527.

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• Vieira, E., ..., Buljan, M., Capan, I., ... & Gomes, M. (2012) Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe/SiO2 superlattice. Journal of applied physics, 111 (10), 104323-1 doi:10.1063/1.4722278.

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• Capan, I., Janicki, V., Jaćimović, R. & Pivac, B. (2012) C–V and DLTS studies of radiation induced Si–SiO2 interface defects. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 282 (1), 59-62 doi:10.1016/j.nimb.2011.08.065.

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• Martin-Sanchez, J., Chahboun, A., Gomes, M., Rolo, A., Pivac, B. & Capan, I. (2012) Carrier storage in Ge nanoparticles produced by pulsed laser deposition. Physica status solidi-rapid research letters, 6 (5), 223-225 doi:10.1002/pssr.201206104.

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• Capan, I., Bak-Misiuk, J., Pivac, B., Dubček, P., Misiuk, A., Bernstorff, S. & Romanowski, P. (2011) Defects in silicon introduced by helium implantation and subsequent annealing. Radiation physics and chemistry, 80 (10), 1099-1103 doi:10.1016/j.radphyschem.2011.02.006.

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• Pastuović, Ž., Vittone, E., Capan, I., Jakšić, M. & (2011) Probability of divacancy trap production in silicon diodes exposed to focused ion beam irradiation. Applied physics letters, 98 (9), 092101, 3 doi:10.1063/1.3559000.

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• Capan, I., Pivac, B. & Slunjski, R. (2011) Electrical characterisation of Si-SiO2 structures. Physica status solidi. C, Current topics in solid state physics, 8 (3), 816-818 doi:10.1002/pssc.201000076.

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• Slunjski, R., Capan, I., Pivac, B., Le Donne, A., Binetti, S. & (2011) Effects of low-temperature annealing on polycrystalline silicon for solar cells. Solar energy materials and solar cells, 95 (2), 559-563 doi:10.1016/j.solmat.2010.09.016.

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• Buljan, M., Grenzer, J., Holý, V., Radić, N., Mišić-Radić, T., Levichev, S., Bernstorff, S., Pivac, B. & Capan, I. (2010) Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate. Applied physics letters, 97 (16), 63117-63119 doi:10.1063/1.3504249.

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• Novoselnik, B., Pilipovic, M., Jaćimović, R., Pivac, B., Slunjski, R. & Capan, I. (2010) Capacitance changes in neutron irradiated n-type silicon: The flux effect. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 268 (15), 2400-2402 doi:10.1016/j.nimb.2010.04.017.

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• Slotte, J., Kuitunen, K., Kilpeläinen, S., Tuomisto, F. & Capan, I. (2010) Divacancies at room temperature in germanium. Thin solid films, 518 (9), 2314-2316 doi:10.1016/j.tsf.2009.09.183.

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• Capan, I., Pivac, B., Hawkins, I., Markevich, V., Peaker, A., Dobaczewski, L. & Jačimović, R. (2009) Neutron-irradiation-induced defects in germanium: A Laplace deep level transient spectroscopy study. Vacuum, 84 (1), 32-36 doi:10.1016/j.vacuum.2009.04.003.

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• Pivac, B., Dubček, P., Capan, I., Zulim, I., Betti, T., Zorc, H. & Bernstorff, S. (2009) Nano Si Superlattices for the Next Generation Solar Cells. Journal of Nanoscience and Nanotechnology, 9 (6), 3853-3857 doi:10.1166/jnn.2009.NS79.

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• Wieteska, K., Misiuk, A., Wierzchowski, W., Bak-Misiuk, J., Romanowski, P., Surma, B., Capan, I., Yang, D., Shalimov, A., Graeff, W. & Prujszczyk, M. (2008) Revealing the Defects Introduced in N- or Ge-doped Cz-Si by gamma Irradiation and High Temperature-High Pressure Treatment. Acta Physica Polonica. A, 114 (2), 439-446 doi:10.12693/APhysPolA.114.439.

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• Kuitunen, K., Tuomisto, F., Slotte, J. & Capan, I. (2008) Divacancy clustering in neutron-irradiated and annealed n-type germanium. Physical review. B, Condensed matter and materials physics, 78 (3), 033202, 4 doi:10.1103/PhysRevB.78.033202.

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• Pivac, B., Dubček, P., Capan, I., Zorc, H., Bernstorff, S., Duguay, S., Slaoui, A. & (2008) Structural analysis of annealed amorphous SiO/SiO2 superlattice. Thin Solid Films, 516 (20), 6796-6799 doi:10.1016/j.tsf.2007.12.005.

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• Dubček, P., Pivac, B., Capan, I., Bernstorff, S., Mu, R. & Vlahovic, B. (2008) Evolution of Nanoparticles in Gold-Implanted Glass. Vacuum, 82 (2), 130-133 doi:10.1016/j.vacuum.2007.07.041.

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• Peaker, A., Markevich, V., Slotte, J., Kuituinen, K., Tuomisto, F., Satta, A., Simoen E., Capan, I., Pivac, B. & Jačimović, R. (2008) Vacancy Clusters in Germanium. Solid state phenomena, 131-133, 125--130130 doi:10.4028/www.scientific.net/SSP.131-133.125.

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• Pivac, B., Dubček, P., Capan, I., Radić, N. & Bernstorff, S. (2008) GISAXS study of Si nanoclusters in SiO/SiO2 layers. Vacuum, 82 (2), 189-192 doi:10.1016/j.vacuum.2007.07.024.

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• Markevich, V., Peaker, A., Capan, I., Lastovskii, S., Dobaczewski, L., Emtsev, V. & Abrosimov, N. (2007) Electrically active defects induced by irradiations with electrons, neutrons and ions in Ge-rich SiGe alloys. Physica. B, Condensed matter, 401-402, 184-187 doi:10.1016/j.physb.2007.08.142.

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• Misiuk, A., Surma, B., Bak-Misiuk, J., Londos, C., Vagovič, P., Kovačević, I., Pivac, B., Jung, W. & Prujszcyk, M. (2007) Revealing the radiation-induced effects in silicon by processing at enhanced temperatures– pressures. Radiation measurements, 42 (4-5), 688-692 doi:10.1016/j.radmeas.2007.01.085.

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• Capan, I., Borjanović, V. & Pivac, B. (2007) Dislocation-related deep levels in carbon rich p- type polycrystalline silicon. Solar energy materials and solar cells, 91 (10), 931-937 doi:10.1016/j.solmat.2007.02.011.

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• Kovačević, I., Pivac, B., Jačimović, R., Khan, M., Markevich, V. & Peaker, A. (2006) Defects induced by irradiation with fast neutrons in n-type germanium. Materials science in semiconductor processing, 9 (4-5), 606-612 doi:10.1016/j.mssp.2006.08.033.

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• Bernstorff, S., Dubček, P., Pivac, B., Kovačević, I., Sassella, A., Borghesi, A. & (2006) XRR and GISAXS study of silicon oxynitride films. Applied surface science, 253 (1), 33-37 doi:10.1016/j.apsusc.2006.05.068.

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• Radić, N., Pivac, B., Dubček, P., Kovačević, I., Bernstorff, S. & (2006) Growth of Ge islands on Si substrates. Thin solid films, 515 (2), 752-755 doi:10.1016/j.tsf.2005.12.198.

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• Pivac, B., Kovačević, I., Dubček, P., Radić, N. & Bernstorff, S. (2006) GISAXS study of Si nanocrystals formation in SiO2 thin films. Thin solid films, 515 (2), 756-758 doi:10.1016/j.tsf.2005.12.192.

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• Pivac, B., Dubček, P., Kovačević, I., Bernstorff, S., Mu, R., Wu, M., Ueda, A. & Vlahović, B. (2006) GISAXS study of gold implanted fused silica. Scripta materialia, 55 (2), 135-138 doi:10.1016/j.scriptamat.2006.03.049.

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• Pivac, B., Kovačević, I., Dubček, P., Radić, N., Bernstorff, S. & Slaoui, A. (2006) Self-organized growth of Ge islands on Si (100) substrates. Thin solid films, 511-512, 153-156 doi:10.1016/j.tsf.2005.12.089.

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• Kovačević, I., Pivac, B., Dubček, P., Radić, N., Bernstorff, S. & Slaoui, A. (2006) A GISAXS study of SiO/SiO2 superlattice. Thin solid films, 511-512, 463-467 doi:10.1016/j.tsf.2005.12.028.

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• Kovačević, I. & Pivac, B. (2005) Defects production in gamma irradiated silicon at different temperatures. Vacuum, 80 (1-3), 223-228 doi:10.1016/j.vacuum.2005.08.002.

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• Kovačević, I., Dubček, P., Zorc, H., Radić, N., Pivac, B. & Bernstorff, S. (2005) GISAXS characterization of Ge islands on Si (100) substrates. Vacuum, 80 (1-3), 69-73 doi:10.1016/j.vacuum.2005.07.027.

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• Kovačević, I., Markevich, V., Hawkins, I., Pivac, B. & Peaker, A. (2005) Vacancy-related complexes in neutron-irradiated silicon. Journal of physics. Condensed matter, 17, S2229-S2235 doi:10.1088/0953-8984/17/22/010.

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• Kovačević-Vojtušek, I., Sabljar-Matovinović, M., Planinić, G., Vučković-Rebrina, S., Kardum-Skelin, I., Knotek, M. & Škegro, D. (2004) Unusual presentation of herpes zoster in an immunocompromised patient: case report. Acta dermatovenerologica Croatica, 12 (3), 166-168.

• Kovačević, I., Borjanović, V. & Pivac, B. (2003) Interstitial defects in ion-implanted Si. Vacuum, 71, 129-133 doi:10.1016/S0042-207X(02)00726-1.

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• Pivac, B., Pavlović, M., Kovačević, I., Etlinger, B. & Zulim, I. (2003) UV light induced defects in amorphous silicon thin films. Vacuum, 71, 135-139.

• Hertz, M., Profozić, V., Arora, V., Smirčić-Duvnjak, L., Kovačević, I., Boras, J., Campaigne Barbara N & Metelko, Ž. (2002) Effects of a a fixed mixture of 25% insulin lispro and 75% NPL on plasma glucose during and after moderate physical exercise in patients with type 2 diabetes. Current medical research and opinion, 18 (4), 188-193 doi:10.1185/030079902125000615.

  doi

• Borjanović, V., Kovačević, I., Zorc, H. & Pivac, B. (2002) Irradiation effects on polycrystalline silicon. Solar Energy Materials and Solar Cells, 72 (1-4), 183-189 doi:10.1016/S0927-0248(01)00163-5.

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• Pivac, B., Borjanović, V., Kovačević, I., Evtody, B. & Katz, E. (2002) Comparative studies of EFG ribbon poly-Si grown by different procedures. Solar energy materials and solar cells, 72 (1-4), 165-171 doi:10.1016/S0927-0248(01)00161-1.

  doi

• Pivac, B., Kovačević, I. & Zulim, I. (2002) Defects introduced in amorphous silicon thin films by light soaking. Thin solid films, 403-404, 513-516 doi:10.1016/S0040-6090(01)01649-2.

  doi

• Pivac, B., Kovačević, I. & Borjanović, V. (2002) Defects in carbon and oxygen implanted p-type silicon. Nuclear Instruments & Methods in Physics Research B, 186, 355-359 doi:10.1016/S0168-583X(01)00917-X.

  doi

• Pivac, B., Borjanović, V. & Kovačević, I. (2000) Intrinsic point defects in polycrystalline silicon. Fizika A, 9 (1), 37-46.

  fizika.hfd.hr

• Borjanović, V., Kovačević, I., Šantić, B. & Pivac, B. (2000) Oxygen-related deep levels in oxygen doped EFG poly-Si. Materials science and engineering B : solid state materials for advanced technology, 71 (SI), 292-296 doi:10.1016/S0921-5107(99)00393-1.

  doi

• Kovačević, I., Profazić, V., Škrabalo, Z., Zjačić-Rotkvić, V., Čabrijan, T., Goldoni, V., Jović-Paškvalin, L., Crnčević-Orlić, Ž., Koselj, M. & Metelko, Ž. (1997) Multicentric clinical trial to asses efficacy and tolerability of acarbose (bay G 5421) in comparison to glibenclamide and placebo. Diabetologia Croatica, 26 (2), 83-89.

Radovi u zbornicima skupova

Znanstveni radovi u zbornicima skupova

• Radulović, V., Ambrožič, K., Snoj, L., Capan, I., Brodar, T., Ereš, Z., Pastuović, Ž., Sarbutt, A., Ohshima, T., Yamazaki, Y. & Coutinho, J. (2020) E-SiCure Collaboration Project: Silicon Carbide Material Studies and Detector Prototype Testing at the JSI TRIGA Reactor. U: Lyoussi, A., Giot, M., Carette, M., Jenčič, I., Reynard-Carette, C., Vermeeren, L., Snoj, L. & Le Dû, P. (ur.)ANIMMA 2019 – Advancements in Nuclear Instrumentation Measurement Methods and their Applications doi:10.1051/epjconf/202022507007.

  doiwww.epj-conferences.org

• Capan, I., Brodar, T., Ohshima, T., Sato, S., Makino, T., Pastuovic, Ž., Siegele, R., Snoj, L., Radulović, V., Coutinho, J., Torres, V. & Demmouche, K. (2018) Deep Level Defects in 4H-SiC Epitaxial Layers. U: ICSCRM 2017 - The 2017 International Conference on Silicon Carbide and Related Materials doi:10.4028/www.scientific.net/msf.924.225.

  doi

• Knežević, T., Nanver, L., Capan, I. & Suligoj, T. (2018) Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures. U: Biljanovic, P. (ur.)Proceedings of the 41st International Convention MIPRO 2018 doi:10.23919/mipro.2018.8399822.

  doi

• Capan, I., Buljan, M., Mišićc-Radic, T., Pivac, B., Radić, N., Grenzer, J., Holy, V., Levichev, S. & Bernstorff, S. (2010) Electrical Characterization of Ge Nanocrystals in Oxide Matrix. U: MRS Online Proceedings Library doi:10.1557/opl.2011.298.

  doi

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• Pivac, B., Kovačević, I., Dubček, P., Radić, N., Bernstorff, S., Vlahović, B. & Zulim, I. (2005) Study of Ge islands on Si (100) substrates. U: Palz, W., Ossenbrink, H. & Helm, P. (ur.)Proceedings of 20th European Photovoltaic Solar Energy Conference.

• Pivac, B., Kovačević, I. & Zulim, I. (2004) Effects of Light Soaking on Amorphous Silicon Thin Films. U: Bal, J., Silvestrini, G., Grassi, A., Palz, W., Vigotti, R., Gamberale, M. & Helm, P. (ur.)Proceedings of 19th European Photovoltaic Solar Energy Conference.

• Pivac, B., Kovačević, I. & Zulim, I. (2004) Effects of Light Soaking on Amorphous Silicon Thin Films. U: J.-L.Bal, G.Silvestrini, A.Grassi, W. Palz, R. Vigotti, M. Gamberale, P. Helm (ur.)19th European Photovoltaic Solar Energy Conference, 7-11 June 2004, Palais des Congres, Paris, France.

• Pivac, B., Kovačević, I., Zulim, I. & Gradišnik, V. (2000) Effects Of Light Soaking On Amorphous Silicon. U: Rohatgi, A. (ur.)Conference Record Of The 28th IEEE Photovoltaic Specialists Conference.

Ocjenski radovi

Magistarski radovi

• Kovačević, I. (2004) 'Temperaturna ovisnost uvođenja defekata u siliciju nastalih gama zračenjem', magistarski rad, Prirodoslovno-matematički fakultet, Zagreb.