The fields of high-energy physics, space, and quantum technologies still must unlock the full potential of photonics and push toward replacing electrons with light for higher performance, lower consumption, and faster data processing. Novel photonics components with exceptional robustness, versatility, and sensitivity together with seamless integration possibilities are sought after. Established platforms such as silicon and silicon carbide are therefore essential for advancing photonic technologies through utilization of novel materials, materials modification through defect engineering and innovative device integration possibilities. The deposition of nanometer-thin layers of boron has resulted in semiconductor devices that have exceptional electrical and optical properties with remarkable robustness. The development of novel sputtered boron layer depositions on silicon and silicon carbide substrates opens new avenues for photodiode fabrication. On silicon carbide, amorphous boron layer will be used for dopingless p-type region formation and realization of pn-junction-like diodes. SiC pn-junction devices offer exceptional versatility that can be utilized as an electrically pumped single-photon light source. Defect engineering in SiC will be studied for its potential in creating efficient single-photon sources which hold promise for advancing quantum communication networks and photonics operating at near-infrared wavelengths. Furthermore, by using novel materials such as upconverting nanoparticles and integrating them with boron deposition technology on single-photon avalanche detectors, near-infrared sensors will be available on silicon platforms. This project aims to further advance sensors and light-emitting devices through research in (i) boron deposition technology on silicon and silicon carbide, (ii) silicon carbide defect engineering for enabling single-photon light emission, and (iii) near-infrared light detection on silicon single-photon avalanche diodes.