Knežević, T., Hadžipašić, A., Ohshima, T., Makino, T. & Capan, I. (2022) M-center in low-energy electron irradiated 4H-SiC. Applied Physics Letters, 120 (25), 252101, 4 doi:10.1063/5.0095827.

Shivakumar, D., Knežević, T. & Nanver, L. (2021) Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si. Journal of Materials Science: Materials in Electronics, 32 (6), 7123-7135 doi:10.1007/s10854-021-05422-7.

Thammaiah, S., Liu, X., Knežević, T., Batenburg, K., Aarnink, A. & Nanver, L. (2021) PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility. Solid-State Electronics, 177, 107938, 10 doi:10.1016/j.sse.2020.107938.

Nanver, L., Knezevic, T., Liu, X., Thammaiah, S., Krakers, M. & (2021) On the Many Applications of Nanometer-Thin Pure Boron Layers in IC and Microelectromechanical Systems Technology. Journal of nanoscience and nanotechnology, 21 (4), 2472-2482 doi:10.1166/jnn.2021.19112.

Knežević, T., Liu, X., Hardeveld, E., Suligoj, T. & Nanver, L. (2019) Limits on thinning of boron layers with/without metal contacting in PureB Si (photo)diodes. IEEE electron device letters, 40 (6), 858-861 doi:10.1109/led.2019.2910465.

Osrečki, Ž., Knežević, T., Nanver, L. & Suligoj, T. (2018) Indirect optical crosstalk reduction by highly- doped backside layer in single-photon avalanche diode arrays. Optical and Quantum Electronics, 50 (3), 152, 13 doi:10.1007/s11082-018-1415-2.

Knežević, T., Nanver, L. & Suligoj, T. (2016) Silicon Drift Detectors with the Drift Field Induced by PureB-Coated Trenches. Photonics (Basel), 3 (4), 54, 18 doi:10.3390/photonics3040054.

Šakić, A., Nanver, L., Scholtes Tom L.M., Heerkensa, C., Knežević, T., Van Veen, G., Kooijman, K. & Vogelsang, P. (2011) Boron-layer silicon photodiodes for high-efficiency low-energy electron detection. Solid-state electronics, 65/66, 38-44 doi:10.1016/j.sse.2011.06.042.

Marković, L., Knežević, T., Nanver, L. & Suligoj, T. (2021) Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer. U: 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO) doi:10.23919/MIPRO52101.2021.9597002.

Lovro Marković, Tihomir Knežević & Tomislav Suligoj (2020) Modeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode. U: 2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO) doi:10.23919/MIPRO48935.2020.9245134.

Krakers, M., Knežević, T., Batenburg, K., Liu, X. & Nanver, L. (2020) Diode design for studying material defect distributions with avalanche–mode light emission. U: 2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS) doi:10.1109/icmts48187.2020.9107933.

Knežević, T., Krakers, M. & Nanver, L. (2020) Broadband PureGaB Ge-on-Si photodiodes responsive in the ultraviolet to near-infrared range. U: Proceedings SPIE 11276, Optical Components and Materials XVII, 112760I doi:10.1117/12.2546734.

Knežević, T., Elsayed, A., Dick, J., Liu, X., Schulze, J., Suligoj, T. & Nanver, L. (2019) Back-end-of-Line CMOS-Compatible Diode Fabrication with Pure Boron Deposition Down to 50°C. U: Proceedings of the ESSDERC 49th European Solid- State Device Research Conference.

Krakers, M., Knezevic, T. & Nanver, L. (2019) Reverse breakdown and light-emission patterns studied in Si PureB SPADs. U: 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings doi:10.23919/mipro.2019.8757007.

Knezevic, T., Nanver, L. & Suligoj, T. (2019) Minimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment. U: Proceedings of SPIE - The International Society for Optical Engineering doi:10.1117/12.2508829.

Knezevic, T., Suligoj, T. & Nanver, L. (2019) Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers. U: International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) doi:10.23919/mipro.2019.8757156.

Nanver, L., Liu, X. & Knezevic, T. (2018) Test structures without metal contacts for DC measurement of 2D-materials deposited on silicon. U: 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS 2018) doi:10.1109/icmts.2018.8383767.

Knezevic, T., Nanver, L. & Suligoj, T. (2018) 2D dark-count-rate modeling of PureB single-photon avalanche diodes in a TCAD environment. U: Witzigmann, B., Osiński, M. & Arakawa, Y. (ur.)Proceedings of SPIE Vol. 10526 doi:10.1117/12.2290757.

Knežević, T., Nanver, L., Capan, I. & Suligoj, T. (2018) Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures. U: Biljanovic, P. (ur.)Proceedings of the 41st International Convention MIPRO 2018 doi:10.23919/mipro.2018.8399822.

Osrečki, Ž., Knežević, T., Nanver, L., Suligoj, T. & (2017) Indirect optical crosstalk reduction by highly- doped backside layer in PureB single-photon avalanche diode arrays. U: Piprek, J. (ur.)Proceedings of the 17th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2017).

Knežević, T., Lis K. Nanver & Suligoj, T. (2017) Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions. U: Petar Biljanović (ur.)Proceedings of the 40th International Convention MIPRO 2017.

Knežević, T. & Suligoj, T. (2016) Examination of the InP/InGaAs single-photon avalanche diodes by establishing a new TCAD-based simulation environment. U: Eberhard Bar, Jurgen Lorenz, Peter Pichler (ur.)2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Knežević, T. & Suligoj, T. (2016) Analysis of Electrical and Optical Characteristics of InP/InGaAs Avalanche Photodiodes in Linear Regime by a New Simulation Environment. U: Biljanović, P. (ur.)Proceedings of the 39th International Convention MIPRO 2016.

Berdalović, I., Osrečki, Ž., Šegmanović, F., Grubišić, D., Knežević, T. & Suligoj, T. (2016) Design of Passive-Quenching Active-Reset Circuit with Adjustable Hold-Off Time for Single-Photon Avalanche Diodes. U: Biljanović, P. (ur.)Proceedings of the 39th International Convention MIPRO 2016.

Janeković, I., Knežević, T., Suligoj, T. & Grubišić, D. (2015) Optimization of floating guard ring parameters in separate-absorption-and-multiplication silicon avalanche photodiode structure. U: Biljanović, P. (ur.)Proceedings of the 38th International Convention MIPRO 2015.

Knežević, T., Suligoj, T., Šakić, A. & Nanver, L. (2012) Modelling of Electrical Characteristics of Ultrashallow Pure Amorphous Boron p+n Junctions. U: Biljanović, P. (ur.)MIPRO 2012 - 35th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings.

Knežević, T., Suligoj, T., Šakić, A. & Nanver, L. (2011) Optimization of the perimeter doping of ultrashallow p+-n--n- photodiodes. U: Biljanović, P. & Skala, K. (ur.)MIPRO 2011 - 34th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings.

Shi, L., Nanver, L., Šakić, A., Nihtianov, S., Knežević, T., Gottwald, A. & Kroth, U. (2011) Series Resistance Optimization of High-Sensitivity Si-based VUV Photodiodes. U: IEEE Instrumentation and Measurement Technology Conference.

Šakić, A., Nanver, L., Van Veen, G., Kooijman, K., Vogelsang, P., Scholtes, T., De Boer, W., Wien, W., Milosavljević, S., Heerkens, C., Knežević, T. & Spee, I. (2010) Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection. U: Technical Digest - International Electron Devices Meeting.

Žilak, J., Knežević, T. & Suligoj, T. (2009) Optimization of Stress Distribution in Sub-45 nm CMOS Structures. U: Topič M., Krč, J. & Šorli, I. (ur.)Proceedings of 45th International Conference on Microelectronics, Devices and Materials MIDEM 2009.

Knežević, T., Žilak, J. & Suligoj, T. (2009) Stress Effect in Ultra-Narrow FinFET Structures. U: Biljanović, P. & Skala, K. (ur.)Proceedings of 32nd International Convention MIPRO 2009.

Knežević Tihomir (2017) 'Physical characteristics and applications of nanometer thin boron-on-silicon layers in silicon detector devices', doktorska disertacija, Fakultet elektrotehnike i računarstva, Zagreb.