Priručnik

• Poljak, Mirko ; Knežević, Tihomir ; Suligoj, Tomislav | Rješavanje praktičnih problema iz mikroelektroničkih komponenti i poluvodičke tehnologije. Zagreb: Fakultet elektrotehnike i računarstva Sveučilišta u Zagrebu, 2015

Izvorni znanstveni rad

• Šakić, Agata ; Nanver, Lis K. ; Scholtes Tom L.M. ; Heerkensa, Carel Th.H. ; Knežević, Tihomir ; Van Veen, Gerard ; Kooijman, Kees ; Vogelsang, Patrick | Boron-layer silicon photodiodes for high-efficiency low-energy electron detection // Solid-state electronics, 65/66 (2011), 38-44. doi: 10.1016/j.sse.2011.06.042

  doiwww.sciencedirect.comac.els-cdn.com

• Knežević, Tihomir ; Nanver, Lis K. ; Suligoj, Tomislav | Silicon Drift Detectors with the Drift Field Induced by PureB-Coated Trenches // Photonics (Basel), 3 (2016), 4; 54, 18. doi: 10.3390/photonics3040054

  doiwww.mdpi.com

• Osrečki, Željko ; Knežević, Tihomir ; Nanver, Lis K. ; Suligoj, Tomislav | Indirect optical crosstalk reduction by highly- doped backside layer in single-photon avalanche diode arrays // Optical and quantum electronics, 50 (2018), 3; 152, 13. doi: 10.1007/s11082-018-1415-2

  doi

• Knežević, Tihomir ; Liu, Xingyu ; Hardeveld, Erwin ; Suligoj, Tomislav ; Nanver, Lis K. | Limits on thinning of boron layers with/without metal contacting in PureB Si (photo)diodes // IEEE electron device letters, 40 (2019), 6; 858-861. doi: 10.1109/led.2019.2910465

  doiieeexplore.ieee.org

• Nanver, L. K. ; Knezevic, Tihomir ; Liu, X. ; Thammaiah, S. D. ; Krakers, M. ; | On the Many Applications of Nanometer-Thin Pure Boron Layers in IC and Microelectromechanical Systems Technology // Journal of nanoscience and nanotechnology, 21 (2021), 4; 2472-2482. doi: 10.1166/jnn.2021.19112

  doi

• Thammaiah, Shivakumar D. ; Liu, Xingyu ; Knežević, Tihomir ; Batenburg, Kevin M. ; Aarnink, A.A.I. ; Nanver, Lis K. | PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility // Solid-state electronics, 177 (2021), 107938, 10. doi: 10.1016/j.sse.2020.107938

  doi

• Shivakumar, D. Thammaiah ; Knežević, Tihomir ; Nanver, Lis K. | Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si // Journal of materials science. Materials in electronics, 32 (2021), 6; 7123-7135. doi: 10.1007/s10854-021-05422-7

  doi

• Knežević, Tihomir ; Hadžipašić, Amira ; Ohshima, Takeshi ; Makino, Takahiro ; Capan, Ivana | M-center in low-energy electron irradiated 4H-SiC // Applied physics letters, 120 (2022), 25; 252101, 4. doi: 10.1063/5.0095827

  doiaip.scitation.orgdoi.orgfulir.irb.hr

• Bernat, Robert; Knežević, Tihomir; Radulovič, Vladimir; Snoj, Luka; Makino, Takahiro; Ohshima, Takeshi; Capan, Ivana | Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes // Materials, 16 (2023), 6; 2202, 11. doi: https://doi.org/10.3390/ma16062202

  doi

Izvorni znanstveni rad

• Knežević, Tihomir ; Žilak, Josip ; Suligoj, Tomislav | Stress Effect in Ultra-Narrow FinFET Structures // Proceedings of 32nd International Convention MIPRO 2009 / Biljanović, Petar ; Skala, Karolj (ur.). Zagreb: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2009. str. 89-94

• Žilak, Josip ; Knežević, Tihomir ; Suligoj, Tomislav | Optimization of Stress Distribution in Sub-45 nm CMOS Structures // Proceedings of 45th International Conference on Microelectronics, Devices and Materials MIDEM 2009 / Topič M. ; Krč, J. ; Šorli, I. (ur.). Ljubljana: Society for Microelectronics, Electronic Components and Materials (MIDEM), 2009. str. 85-90

• Šakić, Agata ; Nanver, Lis K. ; Van Veen, Gerard ; Kooijman, Kees ; Vogelsang, Patrick ; Scholtes, T. L. M. ; De Boer, W. B. ; Wien, W. ; Milosavljević, Silvana ; Heerkens, C. T. H. et al. | Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection // Technical Digest - International Electron Devices Meeting. San Francisco (CA): Institute of Electrical and Electronics Engineers (IEEE), 2010. str. 31.4.1-31.4.4

• Shi, L. ; Nanver, Lis K. ; Šakić, Agata ; Nihtianov, Stoyan N. ; Knežević, Tihomir ; Gottwald, Alexander ; Kroth, Udo | Series Resistance Optimization of High-Sensitivity Si-based VUV Photodiodes // IEEE Instrumentation and Measurement Technology Conference. Binjiang: Institute of Electrical and Electronics Engineers (IEEE), 2011. str. 1-4

• Knežević, Tihomir ; Suligoj, Tomislav ; Šakić, Agata ; Nanver, Lis K. | Optimization of the perimeter doping of ultrashallow p⁺-n^--n^- photodiodes // MIPRO 2011 - 34th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings / Biljanović, Petar ; Skala, Karolj (ur.). Zagreb: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2011. str. 44-48

• Knežević, Tihomir ; Suligoj, Tomislav ; Šakić, Agata ; Nanver, Lis K. | Modelling of Electrical Characteristics of Ultrashallow Pure Amorphous Boron p⁺n Junctions // MIPRO / Biljanović, Petar (ur.). 2012. str. 42-47

• Janeković, Ivan ; Knežević, Tihomir ; Suligoj, Tomislav ; Grubišić, Dragan | Optimization of floating guard ring parameters in separate-absorption-and-multiplication silicon avalanche photodiode structure // Proceedings of the 38th International Convention MIPRO 2015 / Biljanović, Petar (ur.). Rijeka, 2015. str. 37-41

• Berdalović, Ivan ; Osrečki, Željko ; Šegmanović, Filip ; Grubišić, Dragan ; Knežević, Tihomir ; Suligoj, Tomislav | Design of Passive-Quenching Active-Reset Circuit with Adjustable Hold-Off Time for Single-Photon Avalanche Diodes // MIPRO / Biljanović, Petar (ur.). 2016. str. 40-45

• Knežević, Tihomir ; Suligoj, Tomislav | Analysis of Electrical and Optical Characteristics of InP/InGaAs Avalanche Photodiodes in Linear Regime by a New Simulation Environment // MIPRO / Biljanović, Petar (ur.). 2016. str. 34-39

• Knežević, Tihomir ; Suligoj, Tomislav | Examination of the InP/InGaAs single-photon avalanche diodes by establishing a new TCAD-based simulation environment // 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) / Eberhard Bar, Jurgen Lorenz, Peter Pichler (ur.). Nürnberg, 2016. str. 57-60

• Knežević, Tihomir ; Lis K. Nanver ; Suligoj, Tomislav | Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions // MIPRO / Petar Biljanović (ur.). 2017. str. 80-84

• Osrečki, Željko ; Knežević, Tihomir ; Nanver, Lis K. ; Suligoj, Tomislav ; | Indirect optical crosstalk reduction by highly- doped backside layer in PureB single-photon avalanche diode arrays // Proceedings of the 17th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2017) / Piprek, Joachim (ur.). Institute of Electrical and Electronics Engineers (IEEE), 2017. str. 69-70

  ieeexplore.ieee.org

• Knežević, Tihomir ; Nanver, Lis K. ; Capan, Ivana ; Suligoj, Tomislav | Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures // Proceedings of the 41st International Convention MIPRO 2018 / Biljanovic, Petar (ur.). Rijeka: Institute of Electrical and Electronics Engineers (IEEE), 2018. str. 12-17 doi: 10.23919/mipro.2018.8399822

  doi

• Knezevic, Tihomir ; Nanver, Lis K. ; Suligoj, Tomislav | 2D dark-count-rate modeling of PureB single-photon avalanche diodes in a TCAD environment // Proceedings of SPIE, the International Society for Optical Engineering / Witzigmann, Bernd ; Osiński, Marek ; Arakawa, Yasuhiko (ur.). 2018. doi: 10.1117/12.2290757

  doi

• Knezevic, Tihomir ; Suligoj, Tomislav ; Nanver, Lis K. | Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers // International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). Opatija: Institute of Electrical and Electronics Engineers (IEEE), 2019. str. 24-29 doi: 10.23919/mipro.2019.8757156

  doi

• Knezevic, Tihomir ; Nanver, Lis K. ; Suligoj, Tomislav | Minimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment // Proceedings of SPIE, the International Society for Optical Engineering. 2019. doi: 10.1117/12.2508829

  doi

• Krakers, Max ; Knezevic, T. ; Nanver, L. K. | Reverse breakdown and light-emission patterns studied in Si PureB SPADs // 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings. Opatija: Institute of Electrical and Electronics Engineers (IEEE), 2019. str. 30-35 doi: 10.23919/mipro.2019.8757007

  doi

• Knežević, Tihomir ; Elsayed, Ahmed ; Dick, Jan F. ; Liu, Xingyu ; Schulze, Joerg ; Suligoj, Tomislav ; Nanver, Lis K. | Back-end-of-Line CMOS-Compatible Diode Fabrication with Pure Boron Deposition Down to 50°C // Proceedings of the ESSDERC 49th European Solid- State Device Research Conference. Institute of Electrical and Electronics Engineers (IEEE), 2019. str. 242-245

• Knežević, Tihomir ; Krakers, Max ; Nanver, Lis K. | Broadband PureGaB Ge-on-Si photodiodes responsive in the ultraviolet to near-infrared range // Proceedings SPIE 11276, Optical Components and Materials XVII, 112760I. SPIE, 2020. doi: 10.1117/12.2546734

  doi

• Krakers, M. ; Knežević, T. ; Batenburg, K.M. ; Liu, X. ; Nanver, L.K. | Diode design for studying material defect distributions with avalanche–mode light emission // 2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS). Institute of Electrical and Electronics Engineers (IEEE), 2020. doi: 10.1109/icmts48187.2020.9107933

  doi

• Lovro Marković ; Tihomir Knežević ; Tomislav Suligoj | Modeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode // MIPRO. 2020. str. 28-33 doi: 10.23919/MIPRO48935.2020.9245134

  doiieeexplore.ieee.org

• Nanver, L. K. ; Liu, X. ; Knezevic, Tihomir | Test structures without metal contacts for DC measurement of 2D-materials deposited on silicon. Institute of Electrical and Electronics Engineers (IEEE), 2018. str. 69-74 doi: 10.1109/icmts.2018.8383767

  doi

• Marković, Lovro ; Knežević, Tihomir ; Nanver, Lis. K. ; Suligoj, Tomislav | Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer // 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO). 2021. str. 64-69 doi: 10.23919/MIPRO52101.2021.9597002

  doiieeexplore.ieee.org

Prošireni sažetak izlaganja sa skupa

• Tihomir Knežević ; Lis K. Nanver ; Tomislav Suligoj | TCAD-based Simulation Study of the 2D Dark Count Rate in InGaAs/InP Single Photon Avalanche Diodes Employing Standoff Breakdown Suppression Design // EMN Mauritius Meeting 2017 Program & Abstract. 2017. str. 20-21

Ostalo

• Nanver, Lis K. ; Krakers, Max ; Knezevic, Tihomir ; Karavidas, A. ; Agarwal, Vishal ; Hueting, Ray ; Dutta, Satadal ; Boturchuk, Ievgen ; Annema, Anne-Johan | Investigation of light-emission and avalanche- current mechanisms in PureB SPAD devices // Proceedings Volume 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems. SPIE, 2019. doi: 10.1117/12.2501598

  doi

Diplomski rad

• Knežević, Tihomir | Karakteristike FinFET struktura s ultra tankim tijelom pod utjecajem naprezanja / Suligoj, Tomislav (mentor); Poljak, Mirko (neposredni voditelj). | Zagreb, Fakultet elektrotehnike i računarstva, . 2009

Sveučilišni preddiplomski završni rad

• Čović, Maja | ANALIZA P-I-N FOTODIODA VELIKIH BRZINA RADA I OSJETLJIVOSTI / Suligoj, Tomislav (mentor); Knežević, Tihomir (neposredni voditelj). | Zagreb, Fakultet elektrotehnike i računarstva, . 2011

Doktorska disertacija

• Knežević Tihomir | Physical characteristics and applications of nanometer thin boron-on-silicon layers in silicon detector devices / Suligoj Tomislav ; Nanver Lis K. (mentor); | Zagreb, Fakultet elektrotehnike i računarstva, . 2017

Stručna ekspertiza

• Suligoj, Tomislav ; Koričić, Marko ; Knežević, Tihomir ; Žilak, Josip | Emitter Coupled Logic (ECL) Circuit Testing and Measurements in a Novel Horizontal Current Bipolar Transistor (HCBT) Technology – 2nd Lot // Research on the Novel Horizontal Current Bipolar Transistor (HCBT) Structures. 2011.

• Suligoj, Tomislav ; Knežević, Tihomir ; Poljak, Mirko ; Žonja, Sanja ; Žilak, Josip | Optimization of diode capacitance of Annular BS detector // Simulation software for characterization of carrier transport in integrated semi-metallic thin films. 2012.

• Suligoj, Tomislav ; Koričić, Marko ; Knežević, Tihomir ; Poljak, Mirko ; Žilak, Josip | Large Area Reverse Structure Avalanche Photodiode Simulations // Analysis and optimization of Large Area Reverse Structure Avalanche Photodiode fabrication process and electrical characteristics. 2014.

• Suligoj, Tomislav ; Knežević, Tihomir | Avalanche Photodiode Simulations // Analysis and optimization of Large Area Reverse Structure Avalanche Photodiode fabrication process and electrical characteristics. 2014.

• Suligoj, Tomislav ; Knežević Tihomir ; Poljak, Mirko ; Žonja, Sanja ; Žilak, Josip | PureB layers – XRD measurements and temperature characteristics // PureB layer analysis with Raman spectroscopy, ellipsometry and electrical measurements. 2014.

• Suligoj, Tomislav ; Knežević, Tihomir ; Poljak, Mirko ; Žilak, Josip | Spectroscopic elipsometry and Internal photoemission characterization of of PureB layers // PureB layer analysis with Raman spectroscopy, ellipsometry, simulation and electrical measurements. 2013.

• Suligoj, Tomislav ; Koričić, Marko ; Knežević, Tihomir ; Poljak, Mirko ; Žilak, Josip | XPS Data interpretation of PureB layers // PureB layer analysis with Raman spectroscopy, ellipsometry, simulation and electrical measurements. 2013.

• Suligoj, Tomislav ; Koričić, Marko ; Poljak, Mirko ; Žonja, Sanja ; Knežević, Tihomir ; Žilak, Josip | Design of a scalable model of GaN devices // Gallium-nitride device process design kit development. 2014.