1. Institut Ruđer Bošković
  2. Zavodi
  3. Zavod za fiziku materijala
  4. Laboratorij za molekulsku fiziku...
  5. Zaposlenici
  6. Mile Ivanda

dr. sc. Mile Ivanda

voditelj laboratorija
Voditelj laboratorija znanstveni savjetnik u trajnom zvanju
E-mail
ivanda@irb.hr
Telefon
+385 1 456 0928
Mobitel
+385 95 822 6509
Interni broj
1226
1231
Znanstveno-nastavno zvanje
Redoviti profesor u trajnom zvanju
Zavod
Zavod za fiziku materijala
Laboratorij
Laboratorij za molekulsku fiziku i sinteze novih materijala
Adresa
Bijenička cesta 54, Zagreb
Životopis
Preuzmi
CRORIS Research Gate Google Scholar

Obrazovanje

1992 - Doktorska disertacija, Sveučilište u Zagrebu. Naslov: “Struktura i vibracijski fenomeni amorfnog silicija”, voditelj: dr.sc. K. Furić.
1990 - Magistarski rad, Sveučilište u Zagrebu. Naslov: “Istraživanje strukturnih svojstava amorfnog silicija Ramanovom spektroskopijom”, voditelj: dr.sc. K. Furić.
1986 - Diplomski rad iz područja fizike, Sveučilište u Zagrebu. Naslov: “Metoda termičkog vala u AC kalorimetriji”, voditelj: dr.sc. Danijel Đurek.
1981-86 - Studij fizike inžinjerskog smijera, Sveučilište u Zagrebu.
1980-81 - Vojni rok
1980 - Matura, MIOC, Zagreb

Područja znanosti

Projekti

Trenutni projekti:

2019-2022 Sporazum o suradnji s Gradom Zagrebom za projektiranje čiste sobe za Centar izvrsnosti za napredne materijale i senzore, Istraživačka jedinica za nove funkcionalne materijale, Laboratorij za molekularnu fiziku i sintezu novih materijala. Glavni istraživač, 980.000,00 kn

2019-2021 Bilateralni projekt Funkcionalni silicij i plazmon za biološke senzore suradnje između Republike Hrvatske i Mađarske. Glavni istraživač, 6500,00 EUR

2017-2022 Centar za izvrsnost za napredne materijale i senzore, projekt sufinanciran od strane Vlade Republike Hrvatske i Europske unije kroz Europski fond za regionalni razvoj - Operativni program za konkurentnost i koheziju (KK.01.1.1.01.0001 ). Glavni istraživač, 1,3 milijuna eura

Hibridna silicijska nanostruktura za senzore, izvor financiranja: Hrvatska znanstvena zaklada, Broj projekta: IP-2014-09-7046. Glavni istraživač, 996.000,00 kuna

2014-2023 Novi funkcionalni materijali, Centar izvrsnosti za napredne materijale i senzore, izvor financiranja: Ministarstvo znanosti i tehnologije Republike Hrvatske i Strukturni fondovi Europske unije. Glavni istraživač, oko 260.000 kn godišnje.

2016-2019 Ugovor za ispitivanje tankih poluvodičkih filmova, Izvor financiranja: Crodux plin d.d. Glavni istraživač, 150.000,00 kn.

Nagrade i priznanja

2007 MIPRO Konferencija; Nagrada za najbolji znanstveni rad
2005 NATO nagradna istraživačka stipendija
1993-1995 Alexander von Humboldt nagradna stipendija
1992 Poslije-doktorska nagradna stipendija Europske Zajednice

Nastava

2007-2011 M. Ivanda:“Eksperimentalne metode fizike u prirodnim znanostima”, Interuniverzitetski poslijediplomski studij Molekularne bioznanosti, Sveučilište Josipa Jurja Strossmayera u Osijeku, Institut Ruđer Bošković Zagreb, Sveučilište u Dubrovniku
2006-2011 K. Furić i M. Ivanda: “Fundamenti i primjene nanostruktura”, Sveučilišni znanstveni poslijediplomski studij INŽENJERSKA KEMIJA, Fakultet kemijskog inženjerstva i tehnologije
2005-2006 M. Ivanda: “Eksperimentalne metode moderne fizike”, Diplomski studij Proirodoslovno-matematičkog fakulteta, Sveučilište u Zagrebu
1987-1988 M. Ivanda: Fizički praktikum III, Diplomski studij Proirodoslovno-matematičkog fakulteta Sveučilišta u Zagrebu.

Publikacije - Uredničke knjige

Zbornik radova s konferencije

Publikacije - prilozi u knjigama

Izvorni znanstveni rad

Publikacije - prilozi u časopisima

Izvorni znanstveni rad

Prikaz, osvrt, kritika

Stručni rad

Pregledni rad (znanstveni)

Publikacije - prilozi sa skupa (u zborniku)

Sažetak izlaganja sa skupa

Publikacije - prilozi sa skupa (neobjavljeni)

Neobjavljeni prilog sa skupa

Publikacije - ocjenski radovi

Doktorski rad

Publikacije - druge vrste radova

Ostalo

Popularni rad

Izvještaj

Članstva u profesionalnim udrugama / društvima

1997-2001 Blagajnik Hrvatskog fizikalnog društva
1996- Član Europskog fizikalnog društva
1996- Član Hrvatskog fizikalnog društva
1990- Član Hrvatskog astronomskog društva

M. Ivanda has published 164 papers with 2600 citations and Hirsh index H=25 (under the base Web of Science) or 260 papers with 3600 citations and Hirsh index H=29 (under the base Google Scholar) in the area of structure and vibrational dynamics of semiconductor and oxide nanostructures and development of new sensing techniques.

Područja istraživanja:

The research topics:

The research is focused on nanostructural silicon thin films for advanced applications. The Low Pressure Chemical Vapor Deposition (LPCVD) and Physical Vapor Deposition (PVD) were implemented and developed at Ivanda’s group. The different type of silicon based thin films are preparing like silicon reach oxide, silicon reach nitride, amorphous silicon, polycrystalline silicon, doping with boron, phosphorus, erbium and europium, silicon carbide and porous silcon by electrochemical etching. The structural, optical, electrical and transport properties are investigating with a goal of development of doped silicon nanostructured films (dots, wires, porous structure) for thermoelectric elements (Peltier cooler and heater, low temperature sensor); silicon nanocrystals thin films doped with rare earths for photonics (spherical microresonators, optical amplifiers, lasers), silicon carbide thin films on silicon and porous silicon for gas and/or chemical sensing. Beside, different aspects of Raman scattering as a powerful analytic tool has been developed: low frequency Raman scattering for determination of size distribution of nanoparticles, portable Raman spectrometer as well as new techniques for SERS spectroscopy.

 

 

Nanostructured silicon for thermoelectrics

Thermoelectric (TE) devices are able to convert the waste heat form combustion engines, solar energy or from radioactive sources into electrical or some other kind of energy on a pure and non-pollutant way. Silicon, the basic material of semiconductor electronics, is widely available, comparatively cheap, ecologically friendly and technologically well developed. Those are reasons enough to seek a marriage between silicon and thermoelectric properties. Recently, Ivanda’s group has found a large Seebeck coefficient of 200 uV/K (the main physical property of TE materials), in a heavily boron doped polysilicon sample obtained by the LPCVD method. By using the LPCVD method, they are producing various kinds of doped silicon nanostructures (dots and wires) in order to obtain those with good TE properties. They also search for advanced TE properties on nanoporous silicon prepared by anodisation techniqe.

 

Novel silicon based materials for fotonics

The research include the production and the characterization of novel silicon based materials for optoelectronics, namely silicon rich oxides (nitrides), silicon oxide /silicon rich oxide (nitride) multilayers, nanocrystalline silicon and europium doped silicon nanocrystalls in silica layers. All of these new materials will be studied in combination with silica microspheres. These thin films on silica microspheres will be investigated in order to examine different non-linear properties under the high laser light intensity excitation conditions. The Stimulated Raman Scattering and optical amplification being the most promising for the construction of silicon-based laser will be searched on this silicon based thin films deposited on silica microspheres. The project includes cooperation between the IFN-CNR in Trento and the Ruđer Bošković Institute in Zagreb under the 150.000 euros value research project.

 

Porous silicon for sensors

Silicon Epitaxy and Poly-Silicon layers. Silicon, an indirect gap semiconductor, can emit light with 10% efficiency at room temperature, provided that it is in the form of low-dimensional (quantum dots or wires) nanostructures. Ivanda's group is producing porous silicon from three types of silicon layers: Silicon On Insulator (SOI), Silicon Epitaxy and Poly-Silicon layers. Anodizing with DC and AC current of these layers creates new morphology that show intense photoluminescence. The research objectives are new simple and inexpensive techniques for preparation of porous silicon for the development of high sensitive gas sensors, thermoelectric and biocompatible materials. The structures with novel morphologies that exhibit strong photoluminescence were discovered. The luminescence mechanisms and the relationship between bandgap energy, luminescence energy, and size of nanostructures are investigating.

 

Development of new techniques of Raman spectroscopy

The group has significant contribution in development of Raman scattering technique in determination of size distribution of free nanoparticles, of the nanoparticles in matrices and more generally of the size distribution of various nanocomposite materials.  Besides, the portable Raman spectrometer and new methods of SERS spectroscopy are developing for versatile application in environmental, medicine and food analysis.